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BUW22P

Description
6A, 350V, PNP, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size242KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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BUW22P Overview

6A, 350V, PNP, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN

BUW22P Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeSFM
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Codenot_compliant
Maximum collector current (IC)6 A
Collector-emitter maximum voltage350 V
ConfigurationSINGLE
Minimum DC current gain (hFE)12
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment60 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)2200 ns
Maximum opening time (tons)800 ns
VCEsat-Max1.5 V

BUW22P Related Products

BUW22P BUW22
Description 6A, 350V, PNP, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN 6A, 350V, PNP, Si, POWER TRANSISTOR, TO-3
Is it Rohs certified? incompatible incompatible
Maker STMicroelectronics STMicroelectronics
Reach Compliance Code not_compliant not_compliant
Maximum collector current (IC) 6 A 6 A
Collector-emitter maximum voltage 350 V 350 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 12 12
JEDEC-95 code TO-220AB TO-3
JESD-30 code R-PSFM-T3 O-MBFM-P2
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 2
Maximum operating temperature 150 °C 175 °C
Package body material PLASTIC/EPOXY METAL
Package shape RECTANGULAR ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power consumption environment 60 W 75 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE PIN/PEG
Terminal location SINGLE BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Maximum off time (toff) 2200 ns 2200 ns
Maximum opening time (tons) 800 ns 800 ns
VCEsat-Max 1.5 V 1.5 V

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