2N/SST5484 Series
Vishay Siliconix
N-Channel JFETs
2N5484
2N5485
2N5486
PRODUCT SUMMARY
Part Number
2N/SST5484
2N/SST5485
2N/SST5486
SST5484
SST5485
SST5486
V
GS(off)
(V)
−0.3
to
−3
−0.5
to
−4
−2
to
−6
V
(BR)GSS
Min (V)
−25
−25
−25
g
fs
Min (mS)
3
3.5
4
I
DSS
Min (mA)
1
4
8
FEATURES
D
Excellent High-Frequency Gain:
Gps 13 dB (typ) @ 400 MHz
−
5485/6
D
Very Low Noise: 2.5 dB (typ) @
400 MHz
−
5485/6
D
Very Low Distortion
D
High AC/DC Switch Off-Isolation
BENEFITS
D
D
D
D
D
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification
APPLICATIONS
D
D
D
D
High-Frequency Amplifier/Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
DESCRIPTION
The 2N/SST5484 series consists of n-channel JFETs
designed to provide high-performance amplification,
especially at high frequencies up to and beyond 400 MHz.
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), packages provide low-cost options and are
available with tape-and-reel to support automated assembly
(see Packaging Information).
TO-226AA
(TO-92)
D
S
1
D
1
TO-236
(SOT-23
)
3
2
S
2
G
G
3
Top View
2N5484
2N5485
2N5486
Top View
SST5484 (H4)*
SST5485 (H5)*
SST5486 (H6)*
*Marking Code for TO-236
For applications information see AN102 and AN105.
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
www.vishay.com
1
2N/SST5484 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−25
V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−65
to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .
−55
to 150_C
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS FOR 2N SERIES (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
2N5484
2N5485
2N5486
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
b
Gate Reverse Current
Gate Operating Current
c
Gate-Source
Forward Voltage
c
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min Max Unit
V
(BR)GSS
V
GS(off)
I
DSS
I
GSS
I
G
V
GS(F)
I
G
=
−1
mA
, V
DS
= 0 V
V
DS
= 15 V, I
D
= 10 nA
V
DS
= 15 V, V
GS
= 0 V
V
GS
=
−20
V, V
DS
= 0 V
T
A
= 100_C
V
DG
= 10 V, I
D
= 1 mA
I
G
= 10 mA , V
DS
= 0 V
−35
−25
−0.3
1
−3
5
−1
−200
−25
−0.5
4
−4
10
−1
−200
−25
−2
8
−6
20
−1
−200
V
mA
nA
pA
V
−0.002
−0.2
−20
0.8
Dynamic
Common-Source
Forward Transconductance
NO TAG
Common-Source
Output Conductance
NO TAG
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Common-Source
Output Capacitance
Equivalent Input
Noise Voltage
c
g
fs
g
os
C
iss
C
rss
C
oss
e
n
V
DS
= 15 V, V
GS
= 0 V
f = 100 Hz
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz
2.2
0.7
1
10
3
6
50
5
1
2
3.5
7
60
5
1
2
4
8
75
5
1
2
nV⁄
√Hz
pF
mS
mS
High-Frequency
Common-Source
Transconductance
d
Common-Source
Output Conductance
d
Common-Source
Input Conductance
d
Y
f (RE)
fs(RE)
Y
os(RE)
(RE)
Y
iis(RE)
(RE)
V
DS
= 15 V
V
GS
= 0 V
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
V
DS
= 15 V, I
D
= 1 mA
f = 100 MHz
G
ps
V
DS
= 15 V
I
D
= 4 mA
f = 100 MHz
f = 400 MHz
5.5
5.5
45
65
0.05
0.8
20
21
13
0.3
2
1
2.5
2.5
3
2
4
2
4
16
25
18
10
30
20
2.5
18
10
30
20
2.5
dB
0.1
1
1
75
100
100
2.5
3
3.5
mS
mS
mS
Common-Source Power Gain
d
C
S
P
G i
V
DS
= 15 V, V
GS
= 0 V
R
G
= 1 MW , f = 1 kHz
Noise Figure
d
g
NF
V
DS
= 15 V, I
D
= 1 mA
R
G
= 1 kW , f = 100 MHz
V
DS
= 15 V
I
D
= 4 mA
R
G
= 1 kW
www.vishay.com
f = 100 MHz
f = 400 MHz
2
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
2N/SST5484 Series
Vishay Siliconix
SPECIFICATIONS FOR SST SERIES (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
SST5484
SST5485
SST5486
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
b
Gate Reverse Current
Gate Operating Current
c
Gate-Source
Forward Voltage
c
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
V
(BR)GSS
V
GS(off)
I
DSS
I
GSS
I
G
V
GS(F)
I
G
=
−1
mA
, V
DS
= 0 V
V
DS
= 15 V, I
D
= 10 nA
V
DS
= 15 V, V
GS
= 0 V
V
GS
=
−20
V, V
DS
= 0 V
T
A
= 100_C
V
DG
= 10 V, I
D
= 1 mA
I
G
= 10 mA , V
DS
= 0 V
−35
−25
−0.3
1
−3
5
−1
−200
−25
−0.5
−4
10
−1
−200
−25
−2
8
−6
20
−1
−200
V
mA
nA
pA
V
4
−0.002
−0.2
−20
0.8
Dynamic
Common-Source
Forward Transconductance
NO TAG
Common-Source
Output Conductance
NO TAG
Common-Source
Input Capacitance
Common-Source
Reverse Transfer
Capacitance
Common-Source
Output Capacitance
Equivalent Input
Noise Voltage
c
g
fs
g
os
C
iss
C
rss
C
oss
e
n
V
DS
= 15 V, V
GS
= 0 V
f = 100 Hz
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 15 V, V
GS
= 0 V
f = 1 kHz
2.2
0.7
1
10
nV⁄
√Hz
pF
3
6
50
3.5
7
60
4
8
75
mS
mS
High-Frequency
Common-Source
Transconductance
Common-Source
Output Conductance
Common-Source
Input Conductance
Y
f
fs
Y
os
Y
iis
V
DS
= 15 V
V
GS
= 0 V
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
f = 100 MHz
f = 400 MHz
V
DS
= 15 V, I
D
=
1 mA
f = 100 MHz
G
ps
V
DS
= 15 V
I
D
= 4 mA
f = 100 MHz
f = 400 MHz
5.5
5.5
45
65
0.05
0.8
20
21
13
0.3
2
1
2.5
NH
dB
mS
mS
mS
Common-Source
Power Gain
V
DS
= 15 V, V
GS
= 0 V
R
G
= 1 MW , f = 1 kHz
Noise Figure
g
NF
V
DS
= 15 V, I
D
= 1 mA
R
G
= 1 kW , f = 100 MHz
V
DS
= 15 V
I
D
= 4 mA
R
G
= 1 kW
f = 100 MHz
f = 400 MHz
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v3%.
c. This parameter not registered with JEDEC.
d. Not a production test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
www.vishay.com
3
2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
20
I
DSS
−
Saturation Drain Current (mA)
10
r
DS(on)
−
Drain-Source On-Resistance (
Ω )
g
fs
−
Forward Transconductance (mS)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
500
100
r
DS
@
I
D
= 300
mA,
V
GS
= 0 V
400
g
os
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
gos
−
Output Conductance (µS)
80
16
I
DSS
8
12
g
fs
6
300
r
DS
g
os
60
8
4
200
40
4
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
2
100
20
0
0
−2
−4
−6
−8
V
GS(off)
−
Gate-Source Cutoff Voltage (V)
−10
0
0
0
−2
−4
−6
−8
V
GS(off)
−
Gate-Source Cutoff Voltage (V)
−10
0
100 nA
10 nA
Gate Leakage Current
I
D
= 5 mA
g
fs
−
Forward Transconductance (mS)
1 mA
0.1 mA
10
Common-Source Forward
Transconductance vs. Drain Current
V
GS(off)
=
−3
V
V
DS
= 10 V
f = 1 kHz
8
T
A
=
−55_C
I
G
−
Gate Leakage
1 nA
100 pA
10 pA
1 pA
0.1 pA
0
T
A
= 125_C
I
GSS
@
125_C
1 mA
T
A
= 25_C
0.1 mA
I
GSS
@ 25_C
6
25_C
I
D
= 5 mA
4
125_C
2
0
4
12
8
16
V
DG
−
Drain-Gate Voltage (V)
20
0.1
1
I
D
−
Drain Current (mA)
10
Output Characteristics
10
V
GS(off)
=
−2
V
8
I
D
−
Drain Current (mA)
12
I
D
−
Drain Current (mA)
15
Output Characteristics
V
GS(off)
=
−3
V
V
GS
= 0 V
−0.2
V
−0.4
V
V
GS
= 0 V
9
−0.3
V
−0.6
V
6
−0.9
V
−1.2
V
3
−1.5
V
−1.8
V
6
4
−0.6
V
−0.8
V
−1.0
V
−1.2
V
−1.4
V
8
2
0
0
2
4
6
10
0
0
2
4
6
8
10
V
DS
−
Drain-Source Voltage (V)
www.vishay.com
V
DS
−
Drain-Source Voltage (V)
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
4
2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
10
V
GS(off)
=
−2
V
8
I
D
−
Drain Current (mA)
I
D
−
Drain Current (mA)
T
A
=
−55_C
6
25_C
V
DS
= 10 V
8
10
V
GS(off)
=
−3
V
T
A
=
−55_C
25_C
6
125_C
V
DS
= 10 V
Transfer Characteristics
4
125_C
4
2
2
0
0
−0.4
−0.8
−1.2
−1.6
V
GS
−
Gate-Source Voltage (V)
−2
0
0
−0.6
−1.2
−1.8
−2.4
V
GS
−
Gate-Source Voltage (V)
−3
Transconductance vs. Gate-Source Voltage
10
g
fs
−
Forward Transconductance (mS)
V
GS(off)
=
−2
V
V
DS
= 10 V
f = 1 kHz
10
g
fs
−
Forward Transconductance (mS)
Transconductance vs. Gate-Source Voltage
V
GS(off)
=
−3
V
V
DS
= 10 V
f = 1 kHz
8
T
A
=
−55_C
6
25_C
8
T
A
=
−55_C
6
25_C
4
125_C
4
125_C
2
2
0
0
−0.4
−0.8
−1.2
−1.6
−2
V
GS
−
Gate-Source Voltage (V)
0
0
−0.6
−1.2
−1.8
−2.4
−3
V
GS
−
Gate-Source Voltage (V)
On-Resistance vs. Drain Current
300
r
DS(on)
−
Drain-Source On-Resistance (
Ω )
T
A
= 25_C
240
A
V
−
Voltage Gain
V
GS(off)
=
−2
V
180
−3
V
120
80
100
Circuit Voltage Gain vs. Drain Current
g
fs
R
L
A
V
+
1
)
R g
L os
Assume V
DD
= 15 V, V
DS
= 5 V
R
L
+
10 V
I
D
60
40
V
GS(off)
=
−2
V
60
20
−3
V
0
0.1
1
I
D
−
Drain Current (mA)
10
0
0.1
1
I
D
−
Drain Current (mA)
10
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
www.vishay.com
5
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