Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | International Rectifier （ Infineon ） |
| Objectid | 1441620953 |
| package instruction | FLANGE MOUNT, R-PUFM-X7 |
| Reach Compliance Code | unknown |
| compound_id | 10944328 |
| Other features | LOW CONDUCTION LOSS |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 150 A |
| Collector-emitter maximum voltage | 1200 V |
| Configuration | SINGLE WITH BUILT-IN CONFIGURABLE DIODE |
| Gate emitter threshold voltage maximum | 5.5 V |
| Gate-emitter maximum voltage | 20 V |
| JESD-30 code | R-PUFM-X7 |
| Number of components | 1 |
| Number of terminals | 7 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 600 W |
| Maximum power dissipation(Abs) | 600 W |
| Certification status | Not Qualified |
| Maximum rise time (tr) | 250 ns |
| surface mount | NO |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| transistor applications | MOTOR CONTROL |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 200 ns |
| Nominal off time (toff) | 125 ns |
| Maximum opening time (tons) | 250 ns |
| Nominal on time (ton) | 200 ns |
| VCEsat-Max | 2.7 V |
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