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IRGTIN025M12

Description
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, POWER, INT-A-PAK-7
CategoryDiscrete semiconductor    The transistor   
File Size196KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRGTIN025M12 Overview

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, POWER, INT-A-PAK-7

IRGTIN025M12 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-PUFM-X7
Contacts7
Reach Compliance Codeunknown
Other featuresLOW CONDUCTION LOSS
Shell connectionISOLATED
Maximum collector current (IC)50 A
Collector-emitter maximum voltage1200 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum5.5 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PUFM-X7
Number of components2
Number of terminals7
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment385 W
Maximum power dissipation(Abs)385 W
Certification statusNot Qualified
Maximum rise time (tr)250 ns
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Maximum off time (toff)200 ns
Nominal off time (toff)125 ns
Maximum opening time (tons)250 ns
Nominal on time (ton)200 ns
VCEsat-Max2.7 V
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