IRHA8260 datasheet, PDF - EEWORLD Datasheet

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IRHA8260: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size144KB，8 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRHA8260 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

IRHA8260 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	43 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	300 W
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)

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PD - 91397A

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET

TRANSISTOR

IRHNA7260

IRHNA8260

N-CHANNEL

MEGA RAD HARD

200Volt, 0.070Ω, MEGA RAD HARD HEXFET

Ω

International Rectifier’s RAD HARD technology

HEXFETs demonstrate immunity to SEE failure. Ad-

ditionally, under

identical

pre- and post-irradiation test

conditions, International Rectifier’s RAD HARD

HEXFETs retain

identical

electrical specifications up

to 1 x 10

Rads (Si) total dose. No compensation in

gate drive circuitry is required. These devices are also

capable of surviving transient ionization pulses as high

as 1 x 10

Rads (Si)/Sec, and return to normal op-

eration within a few microseconds. Since the RAD

HARD process utilizes International Rectifier’s pat-

ented HEXFET technology, the user can expect the

highest quality and reliability in the industry.

RAD HARD HEXFET transistors also feature all of

the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of paral-

leling and temperature stability of the electrical pa-

rameters. They are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits in space and weapons environments

Product Summary

Part Number

IRHNA7260

IRHNA8260

DSS

200V

DS(on)

0.070Ω

43A

Features:

Radiation Hardened up to 1 x 10

Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light Weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 12V, TC = 25°C Continuous Drain Current

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

TSTG

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Package Mounting Surface Temperature

Weight

172

300

2.4

±20

500

5.7

-55 to 150

Pre-Irradiation

IRHNA7260, IRHNA8260

Units

W/°C

V/ns

300 ( for 5 Sec.)

3.3 (typical)

www.irf.com

8/25/98

IRHA8260 Related Products

	IRHA8260	IRHA7260
Description	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Is it Rohs certified?	incompatible	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Reach Compliance Code	unknown	unknow
Configuration	Single	Single
Maximum drain current (Abs) (ID)	43 A	43 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e0
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	300 W	300 W
surface mount	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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