IRHC7450 datasheet, PDF - EEWORLD Datasheet

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IRHC7450: DescriptionPower Field-Effect Transistor, 500V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size56KB，1 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRHC7450 Overview

Power Field-Effect Transistor, 500V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRHC7450 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Objectid	1439653227
package instruction	UNCASED CHIP, S-XUUC-N2
Reach Compliance Code	unknown
compound_id	10920717
Other features	RADIATION HARDENED
Configuration	SINGLE
Minimum drain-source breakdown voltage	500 V
Maximum drain-source on-resistance	0.44 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-XUUC-N2
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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IRHC7450 Related Products

	IRHC7450	IRHC7130	IRHC7110	IRHC7150	IRHC7230
Description	Power Field-Effect Transistor, 500V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	UNCASED CHIP, S-XUUC-N2	UNCASED CHIP, R-XUUC-N2	UNCASED CHIP, R-XUUC-N2	UNCASED CHIP, S-XUUC-N2	UNCASED CHIP, R-XUUC-N2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Other features	RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	500 V	100 V	100 V	100 V	200 V
Maximum drain-source on-resistance	0.44 Ω	0.16 Ω	0.6 Ω	0.055 Ω	0.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-XUUC-N2	R-XUUC-N2	R-XUUC-N2	S-XUUC-N2	R-XUUC-N2
Number of components	1	1	1	1	1
Number of terminals	2	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	SQUARE	RECTANGULAR	RECTANGULAR	SQUARE	RECTANGULAR
Package form	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP
Peak Reflow Temperature (Celsius)	225	225	225	225	225
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
JESD-609 code	-	e0	-	e0	e0
Terminal surface	-	TIN LEAD	-	TIN LEAD	TIN LEAD
Base Number Matches	-	1	1	1	1

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