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IRHE120

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size76KB,1 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRHE120 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

IRHE120 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)6 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)20 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
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Index Files: 283  160  2406  1551  2302  6  4  49  32  47 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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