UF5404G datasheet, PDF - EEWORLD Datasheet

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UF5404G: Description3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD; CategoryDiscrete semiconductor diode; File Size153KB，2 Pages; ManufacturerJGD（Jinan Gude Electronic Device）; Websitehttp://www.jgd.com.cn/

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UF5404G Overview

3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD

UF5404G Parametric

Parameter Name	Attribute value
Maker	JGD（Jinan Gude Electronic Device）
package instruction	O-PALF-W2
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
application	ULTRA FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	100 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	10 µA
Maximum reverse recovery time	0.05 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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UF5404G Related Products

	UF5404G	UF5408G	UF5407G	UF5406G	UF5402G	UF5401G	UF5400G
Description	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD
Maker	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）	JGD（Jinan Gude Electronic Device）
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknown	unknown	unknow	unknown	unknow	unknown	unknow
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
application	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.4 V	1.4 V	1.4 V	1.1 V	1.1 V	1.1 V
JEDEC-95 code	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	100 A	100 A	100 A	100 A	100 A	100 A	100 A
Number of components	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	400 V	1000 V	800 V	600 V	200 V	100 V	50 V
Maximum reverse current	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA
Maximum reverse recovery time	0.05 µs	0.075 µs	0.075 µs	0.075 µs	0.05 µs	0.05 µs	0.05 µs
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

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