VISHAY
LL1V5 / LL2V0 / LL2V4
Vishay Semiconductors
Voltage Stabilizers
Features
• Silicon Planar Stabilizer Diodes
• Monolithic integrated analog circuits in MiniMELF
case, designed for small power stabilizer and limi-
tation circuits, providing low dynamic resistance
and high-quality stabilization performance as well
as low noise. In the reverse direction, these
devices show the behavior of forward-biased sili-
con diodes.
17205
• The end of the device marked with the cathode
ring is to be connected: LL1.5 and LL2 to the neg-
ative pole of the supply voltage; LL2.4 to the posi-
tive pole of the supply voltage
• These diodes are also available in DO-35 case
with the type designation ZTE1.5 - ZTE 2.4.
Mechanical Data
Case:
MiniMELF Glass Case (SOD-80)
Weight:
approx. 50 mg
Packaging codes/options:
GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7 " reel (8 mm tape), 12.5 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Operating Current (see Table "Electrical
Characteristics")
Inverse current
Power dissipation
Junction temperature
Storage temperature range
1)
Test condition
Symbol
Value
Unit
I
F
P
tot
T
J
T
S
100
300
1)
150
- 55 to + 150
mA
mW
°C
°C
Valid provided that electrodes are kept at ambient temperature
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Temperature Coefficient of the
stabilized voltage
Test condition
I
Z
= 5 mA
Symbol
α
VZ
α
VZ
α
VZ
α
VZ
Thermal resistance junction to
ambient air
1)
Value
Unit
10
-4
/°C
10
-4
/°C
10
-4
/°C
10
-4
/°C
R
θJA
400
1)
°C/W
Valid provided that electrodes are kept at ambient temperature
Document Number 85814
Rev. 1.5, 21-Oct-03
www.vishay.com
1
LL1V5 / LL2V0 / LL2V4
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward Voltage
Test condition
I
F
= 10 mA
Symbol
V
F
Min
Typ.
Max
1.1
VISHAY
Unit
V
Electrical Characteristics
Partnumber
Operating Voltage
V
Z
@ I
Z
= 5 mA
(2)
V
min
LL1V5
LL2V0
LL2V4
(1)
(2)
Dynamic Resistance
r
zj
@ I
Z
= 5 mA
Ω
max
1.55
2.3
2.56
13(<20)
18(<30)
14(<20)
Permissable operating
current
I
Z
@ T
amb
= 25 °C
mA
max
120
120
120
1.35
2
2.2
Valid provided that electrodes are kept at ambient temperature at a distance of 8 mm from case
Tested with pulses t
p
= 5 ms
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
LL1.5
LL2 2.4
LL1.5
LL2
2.4
18200
18201
Fig. 1 Breakdown Characteristics
Fig. 2 Admissible Power Dissipation vs. Ambient Temperature
www.vishay.com
2
Document Number 85814
Rev. 1.5, 21-Oct-03
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
LL1V5 / LL2V0 / LL2V4
Vishay Semiconductors
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85814
Rev. 1.5, 21-Oct-03
www.vishay.com
5
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