IRFF221 datasheet, PDF - EEWORLD Datasheet

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IRFF221: Description3.5A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF; CategoryDiscrete semiconductor The transistor; File Size149KB，7 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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IRFF221 Overview

3.5A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

IRFF221 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V
Maximum drain current (Abs) (ID)	3.5 A
Maximum drain current (ID)	3.5 A
Maximum drain-source on-resistance	0.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	20 W
Maximum power dissipation(Abs)	20 W
Maximum pulsed drain current (IDM)	14 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	160 ns
Maximum opening time (tons)	100 ns

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IRFF221 Related Products

	IRFF221	IRFF223	IRFF222
Description	3.5A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF	3A, 150V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF	3A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Is it Rohs certified?	incompatible	incompatible	incompatible
Reach Compliance Code	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V	150 V	200 V
Maximum drain current (Abs) (ID)	3.5 A	3 A	3 A
Maximum drain current (ID)	3.5 A	3 A	3 A
Maximum drain-source on-resistance	0.8 Ω	1.2 Ω	1.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF	TO-205AF	TO-205AF
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	20 W	20 W	20 W
Maximum power dissipation(Abs)	20 W	20 W	20 W
Maximum pulsed drain current (IDM)	14 A	12 A	12 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maximum off time (toff)	160 ns	160 ns	160 ns
Maximum opening time (tons)	100 ns	100 ns	100 ns
Maker	Renesas Electronics Corporation	-	Renesas Electronics Corporation

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