MGA-31589
0.5 W High Gain Driver Amplifier
Data Sheet
Description
Avago Technologies’ MGA-31589 is a 0.5 W, high Gain,
high performance Driver Amplifier MMIC, housed in a
standard SOT-89 plastic package. The device required
simple matching components to achieve optimum per-
formance within specific 100 to 200 MHz bandwidth.
MGA-31589 is especially ideal for wireless infrastructure
applications that operate within the 450 MHz to 1.5 GHz
frequency range. With high IP3 and low noise figure, the
MGA-31589 may be utilized as a driver amplifier in the
transmit chain and as second or third stage LNA in the re-
ceive chain. For optimum performance at higher frequen-
cy from 1.5 GHz to 3.0 GHz, MGA-31689 is recommended.
MGA-31589’s high gain and high linearity features are
achieved through the use of Avago Technologies’ propri-
etary 0.25
mm
GaAs Enhancement-mode pHEMT process.
Features
•
ROHS compliant
•
Halogen free
•
High linearity at low DC bias power
[1]
•
High Gain
•
Low noise figure
•
High OIP3
•
Advanced enhancement mode PHEMT Technology
•
Excellent uniformity in product specification
•
SOT-89 standard package
Specifications
At 0.9 GHz, Vdd = 5 V, Idd = 146 mA (typical) at 25° C
•
OIP3 = 45.3 dBm
•
Noise Figure = 1.9 dB
•
Gain = 20.4 dB
•
P1dB = 27.2 dBm
•
IRL = 14.0 dB, ORL = 11.6 dB
Note:
1. The MGA-31589 has a superior LFOM of 16. Linearity Figure of Merit
(LFOM) is essentially OIP3 divided by DC bias power.
Pin connections and Package Marking
15X
#1
#2
RFin
GND
Top View
#3
RFout
#3
#2
RFout
GND
#1
RFin
VDD
C
C
C
L
RF OUT
L
L
C
C
C
Bottom View
Note:
Top View: Package marking provides orientation and identification
“15” = Device Code
“X” = Date Code character indentifies month of manufacturing
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 150 V
ESD Human Body Model = 650 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
RF IN
C
MGA-31589
Figure 1. Simplified Schematic diagram
MGA-31589 Absolute Maximum Rating
[1]
Symbol
V
dd, max
P
d
P
in
T
j
T
STG
Thermal Resistance
Units
V
mW
dBm
°C
°C
Parameter
Drain Voltage, RF output to ground
Power Dissipation
(2)
CW RF Input Power
Junction Temperature
Storage Temperature
Absolute Max.
5.5
1050
17
150
-65 to 150
Thermal Resistance
[3]
(V
dd
= 5.0 V, I
dd
= 146 mA, T
c
= 85° C),
θ
jc
= 44° C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Source lead temperature is 25° C. Derate 22.7
mW/° C for T
L
>103.8° C.
3. Thermal resistance measured using 150° C
Infra-Red Microscopy Technique.
MGA-31589 Electrical Specification
[1]
T
C
= 25° C, Z
o
= 50
W,
V
dd
= 5 V, unless specified.
Symbol
I
ds
NF
Gain
OIP3
P1dB
PAE
IRL
ORL
ISOL
Parameter and Test Condition
Quiescent Current
Noise Figure
Gain
Output Third Order Intercept Point
Output Power at 1 dB Gain Compression
Power Added Efficiency at P1dB
Input Return Loss
Output Return Loss
Isolation
Frequency
(MHz)
NA
700
900
700
900
700
[2]
900
[2]
700
900
700
900
700
900
700
900
700
900
Units
mA
dB
dB
dBm
dBm
%
dB
dB
dB
Min.
115
Typ.
146
2.35
1.92
Max.
175
2.8
22.0
19.3
40.0
26.3
20.5
20.4
45.2
45.3
26.4
27.2
43.6
45.0
20.0
14.0
10.4
11.6
28.0
27.5
Note :
1. Measurements obtained from a test circuit described in Figure 27.
2. OIP3 test condition: F1 - F2 = 1.0 MHz, with input power of -8 dBm per tone measured at worst case side band.
2
MGA-31589 Consistency Distribution Chart
[1,2]
LSL
USL
LSL
100
120
140
160
180
26
27
28
Figure 2. Idd at Vdd = 5 V, LSL = 115 mA , Nominal = 146 mA, USL = 175 mA
Figure 3. OP1dB at 900 MHz, Vdd = 5 V, LSL= 26.3 dBm, Nominal = 27.2 dBm
LSL
USL
USL
20
21
22
1
1.5
2
2.5
3
Figure 4. Gain at 900 MHz, Vdd = 5 V, LSL = 19.3 dB, Nominal = 20.4 dB,
USL = 22.0 dB
Figure 5. NF at 900 MHz, Vdd = 5 V, Nominal = 1.92 dB, USL = 2.8 dB
LSL
40
45
50
55
Figure 6. OIP3 at 900 MHz, Vdd = 5 V, LSL = 40.0 dBm, Nominal = 45.3 dBm
Notes:
1. Data sample size is 2500 samples taken from 5 wafers and 3 different
wafer lots. Future wafers allocated to this product may have nominal
values anywhere between the upper and lower limits.
2. Measurements are made on production test board which represents
a trade off between nominal Gain, NF, OIP3, and OP1dB. Circuit losses
have been de-embedded from actual measurements.
3
MGA-31589 Application Circuit Data for 700 MHz
T
A
= 25° C, V
dd
= 5 V, I
dd
= 146 mA
48
46
OP1dB (dBm)
OIP3 (dBm)
44
42
40
38
36
700
750
Frequency (MHz)
25° C
85° C
-40° C
800
27.2
27.0
26.8
26.6
26.4
26.2
26.0
700
750
Frequency (MHz)
800
25° C
85° C
-40° C
Figure 7. Over Temperature OIP3 vs Frequency
Figure 8. Over Temperature OP1dB vs Frequency
21
20.8
Gain (dB)
IRL (dB)
20.6
20.4
20.2
20
700
25° C
85° C
-40° C
750
Frequency (MHz)
800
-10
-15
-20
-25
-30
-35
700
25° C
85° C
-40° C
750
Frequency (MHz)
800
Figure 9. Over Temperature Gain vs Frequency
Figure 10. Over Temperature IRL vs Frequency
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
700
-27.0
25° C
85° C
-40° C
Isolation (dB)
-27.5
25° C
85° C
-40° C
ORL (dB)
-28.0
750
Frequency (MHz)
800
-28.5
700
750
Frequency (MHz)
800
Figure 11. Over Temperature ORL vs Frequency
Figure 12. Over Temperature Isolation vs Frequency
4
MGA31589 Application Circuit Data for 700 MHz
(continued)
3.5
3.0
2.5
NF (dB)
2.0
1.5
1.0
0.5
0.0
700
750
Frequency (MHz)
25° C
85° C
-40° C
800
OIP3 (dBm)
47
46
45
44
43
42
41
40
39
10
11
12
13
14 15 16 17
Pout / Tone (dBm)
18
19
20
25° C
85° C
-40° C
Figure 13. Over Temperature Noise Figure vs Frequency
Figure 14. Over Temperature OIP3 at 700 MHz vs Pout
-46
-48
W-CDMA 3GPP
-50 Test Model 1+64 DPCH, 3.84 MHz BW
-52
-54
-56
-58
-60
-62
-64
-66
700 MHz @ 25° C
-68
700 MHz @ 85° C
-70
700 MHz @ -40° C
-72
-74
10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0
Pout (dBm)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
ACLR (dBc)
K-factor
85˚C
25˚C
-40˚C
0
5
10
Frequency (GHz)
15
20
Figure 15. Over Temperature ACLR vs Pout at 700 MHz
Figure 16. Over Temperature K-factor vs Frequency
5
京公网安备 11010802033920号
EEWORLD
