BCP56TA datasheet, PDF - EEWORLD Datasheet

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BCP56TA: DescriptionSmall Signal Bipolar Transistor, 1-Element, Silicon; CategoryDiscrete semiconductor The transistor; File Size42KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BCP56TA Overview

Small Signal Bipolar Transistor, 1-Element, Silicon

BCP56TA Parametric

Parameter Name	Attribute value
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Configuration	SINGLE
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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SOT223 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 AUGUST 1995

7

FEATURES

* Suitable for AF drivers and output stages

* High collector current and Low V

CE(sat)

COMPLEMENTARY TYPE

PARTMARKING DETAILS

BCP53

BCP56

BCP56 10

BCP56 16

C

BCP56

E

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature

Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

VALUE

100

80

5

1.5

1

2

-55 to +150

UNIT

V

A

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter Turn-On

Voltage

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

MIN.

100

80

5

100

20

10

0.5

1.0

40

25

63

100

250

100

160

125

160

250

MHz

TYP.

MAX.

UNIT

V

nA

CONDITIONS.

I

C

=100

µ

A

I

C

= 10mA *

I

E

=10

µ

A

V

CB

=30V

V

CB

=30V, T

amb

=150°C

V

EB

=5V

I

C

=500mA, I

B

=50mA*

I

C

=500mA, V

CE

=2V*

I

C

=150mA,

I

C

=500mA,

I

C

=150mA,

I

C

=150mA,

V

CE

=2V*

V

CE

=2V*

V

CE

=2V*

V

CE

=2V*

µ

A

µ

A

Emitter Cut-Off Current I

EBO

V

CE(sat)

V

BE(on)

V

Static Forward Current h

FE

Transfer Ratio

BCP56-10

BCP56-16

Transition Frequency

f

T

I

C

=50mA, V

CE

=10V,

f=100MHz

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

3 - 18

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