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TD210N12KOF

Description
Silicon Controlled Rectifier, 410A I(T)RMS, 210000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-5
CategoryAnalog mixed-signal IC    Trigger device   
File Size415KB,13 Pages
ManufacturerEUPEC [eupec GmbH]
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TD210N12KOF Overview

Silicon Controlled Rectifier, 410A I(T)RMS, 210000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, MODULE-5

TD210N12KOF Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
package instructionMODULE-5
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Shell connectionISOLATED
Nominal circuit commutation break time250 µs
ConfigurationSINGLE WITH BUILT-IN DIODE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage2 V
Quick connection descriptionG-GR
Description of screw terminalsA-K-AK
Maximum holding current300 mA
JESD-30 codeR-XUFM-X5
Maximum leakage current50 mA
On-state non-repetitive peak current5800 A
Number of components1
Number of terminals5
Maximum on-state current210000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current410 A
Off-state repetitive peak voltage1200 V
Repeated peak reverse voltage1200 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Trigger device typeSCR
N
Netz-Thyristor-Modul
Phase Control Thyristor Module
Datenblatt / Data sheet
TT210N
TT210N
Kenndaten
TD210N
TD210N...-A
DT210N
TD210N...-K
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T
vj
= -40°C... T
vj max
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
C
= 85°C
T
C
= 73°C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 747-6
f = 50 Hz, i
GM
= 1 A, di
G
/dt = 1 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
6.Kennbuchstabe / 6
th
letter F
T
vj
= -40°C... T
vj max
T
vj
= +25°C... T
vj max
Elektrische Eigenschaften
V
DRM
,V
RRM
1200
1600
V
DSM
V
RSM
I
TRMSM
I
TAVM
I
TSM
I²t
(di
T
/dt)
cr
(dv
D
/dt)
cr
1200
1600
1300
1700
1400 V
1800 V
1400 V
1800 V
1500 V
1900 V
410 A
210 A
261 A
6600 A
5800 A
218000 A²s
168000 A²s
150 A/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
T
vj
= T
vj max
, i
T
= 700 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= 25°C, v
D
= 6 V
T
vj
= 25°C, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 6 V, R
A
= 5
v
T
V
(TO)
r
T
I
GT
V
GT
I
GD
V
GD
I
H
max.
1,65 V
1 V
0,85 mΩ
max.
max.
max.
max.
max.
max.
max.
max.
max.
200 mA
2 V
10 mA
5 mA
0,2 V
300 mA
1200 mA
50 mA
3 µs
T
vj
= 25°C, v
D
= 6 V, R
GK
10
I
L
i
GM
= 1 A, di
G
/dt = 1 A/µs, t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6
T
vj
= 25 °C,i
GM
= 1 A, di
G
/dt = 1 A/µs
i
D
, i
R
t
gd
prepared by: C.Drilling
approved by: J. Novotny
date of publication:
revision:
03.04.02
1
BIP AC / Warstein,den 03.04.85 Bösterling
A4 /82
Seite/page
1/12
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