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2SK1326XJD01

Description
Small Signal Field-Effect Transistor, 0.05A I(D), 22V, 1-Element, N-Channel, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size145KB,1 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SK1326XJD01 Overview

Small Signal Field-Effect Transistor, 0.05A I(D), 22V, 1-Element, N-Channel, Silicon

2SK1326XJD01 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage22 V
Maximum drain current (ID)0.05 A
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

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