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2N5830TRG

Description
Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
CategoryDiscrete semiconductor    The transistor   
File Size406KB,6 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

2N5830TRG Overview

Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

2N5830TRG Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Reach Compliance Code_compli
Collector-based maximum capacity4 pF
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)80
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.25 V
Base Number Matches1
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