2SB828-YB datasheet, PDF - EEWORLD Datasheet

2SB828-YB: DescriptionPower Bipolar Transistor, 12A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin; CategoryDiscrete semiconductor The transistor; File Size85KB，2 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SB828-YB Overview

Power Bipolar Transistor, 12A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	12 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
JEDEC-95 code	TO-218
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power consumption environment	80 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	10 MHz
VCEsat-Max	0.5 V
Base Number Matches	1

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