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UF4004

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size50KB,2 Pages
ManufacturerFORMOSA
Websitehttp://www.formosams.com/
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UF4004 Overview

SIGNAL DIODE

UF4004 Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSignal diode
UF4001
THRU
UF4007
1.0 AMP HIGH EFFICIENCY RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* High speed switching
1.0 Ampere
DO-41
.107(2.7)
.080(2.0)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.34 grams
.205(5.2)
.166(4.2)
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=50 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
UF4001
UF4002
UF4003
UF4004
UF4005
UF4006
UF4007
UNITS
V
V
V
A
A
V
mA
mA
nS
pF
C
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
1.3
5.0
150
600
420
600
800
560
800
1000
700
1000
1.0
1.5
1.70
50
15
-65
+150
70
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

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Description SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 RECTIFIER DIODE,600V V(RRM),DO-41 RECTIFIER DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
state ACTIVE - ACTIVE ACTIVE CONSULT MFR - -
Diode type Signal diode - Signal diode SIGNAL DIODE rectifier diode - -
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