PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE688M13
FEATURES
•
NEW MINIATURE M13 PACKAGE:
– Small transistor outline –
1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 9.5 GHz
LOW NOISE FIGURE:
NF = 1.7 dB at 2 GHz
HIGH COLLECTOR CURRENT:
I
C
MAX = 100 mA
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M13
+0.1
0.5 –0.05
+0.1
0.15 –0.05
1
0.35
0.3
2
•
•
•
XX
1
+0.1
1.0 –0.05
3
0.7
0.35
2
+0.1
0.15 –0.05
0.2
3
+0.1
0.2 –0.05
0.1
0.1
0.2
DESCRIPTION
The NE688M13 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/flat lead style "M13" package
is ideal for today's portable wireless applications. The NE688
is also available in chip and six different low cost plastic surface
mount package styles.
0.5±0.05
+0.1
0.125 –0.05
Bottom View
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE2
I
CBO
I
EBO
C
RE3
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
GHz
dB
dB
dB
dB
µA
µA
pF
0.7
3
80
MIN
4
NE688M13
2SC5616
M13
TYP
5
9.5
1.9
1.7
4
8
145
0.1
0.1
0.8
2.5
MAX
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Noise Figure at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Forward Current Gain at V
CE
= 1 V, I
C
= 3 mA
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 1 V, I
E
= 0, f = 1 MHz
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories
NE688M13
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T2
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
9
6
2
100
140
150
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm
2
X 1.2 mm glass epoxy board.
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
200
µA
25
200
V
CE
= 1 V
D.C. CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current, I
C
(mA)
180
µA
160
µA
20
140
µA
120
µA
15
DC Current Gain, h
FE
7
100
µA
80
µA
60
µA
100
10
5
40
µA
I
B
= 20
µA
0
0
2.5
5
0
0.1 0.2
0.5
1
2
5
10
20
50
100
Collector to Emmiter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
50
V
CE
= 1 V
Collector Current, I
C
(mA)
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0
0.5
1
Base to Emmiter Voltage, V
BE
(V)
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
2/09/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
Embedded System
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