DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5653
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN NON-LEAD MINIMOLD
FEATURES
• 1006 package employed (1.0
×
0.6
×
0.5 mm)
• NF = 1.3 dB TYP. @ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
•
S
21e
2
= 10.0 dB TYP. @ V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
ORDERING INFORMATION
Part Number
2SC5653
2SC5653-T1
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide paper carrier taping
• Pin 3 (Collector) face the perforation side of the tape
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
5
3
2
30
90
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy substrate
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15246EJ1V0DS00 (1st edition)
Date Published December 2000 NS CP(K)
Printed in Japan
©
2000
2SC5653
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
Reverse Transfer Capacitance
f
T
f
T
S
21e
2
S
21e
2
NF
NF
C
re
Note 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
BE
= 1 V, I
C
= 0 mA
V
CE
= 2 V, I
C
= 20 mA
–
–
70
–
–
–
100
100
130
nA
nA
–
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
opt
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
7.0
9.0
6.0
8.5
–
–
–
9.0
11.0
7.5
10.0
1.3
1.3
0.4
–
–
–
–
2.0
2.0
0.8
GHz
GHz
dB
dB
dB
dB
pF
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
70 to 100
EB
F
90 to 130
FB
2
Data Sheet P15246EJ1V0DS
2SC5653
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
300
250
200
150
100
Mounted on Glass Epoxy Board
(1.08 cm
2
×
1.0 mm (t) )
1.0
f = 1 MHz
0.8
0.3
0.4
90
50
0.2
0
25
50
75
100
125
150
0
1
2
3
4
5
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
30
V
CE
= 1 V
Collector Current I
C
(mA)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
30
V
CE
= 2 V
25
20
15
10
5
25
20
15
10
5
0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
30
Collector Current I
C
(mA)
320
µ
A
280
µ
A
240
µ
A
200
µ
A
160
µ
A
120
µ
A
80
µ
A
I
B
= 40
µ
A
25
20
15
10
5
0
1
2
3
4
Collector to Emitter Voltage V
CE
(V)
Data Sheet P15246EJ1V0DS
3
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