2N5087
Amplifier Transistor
PNP Silicon
Features
•
These are Pb−Free Devices*
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3 COLLECTOR
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
−
Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
50
50
3.0
50
625
5.0
1.5
12
−55
to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
TO−92
CASE 29
STYLE 1
2
BASE
1 EMITTER
3
STRAIGHT LEAD
BULK PACK
12
1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
MARKING DIAGRAM
2N
5087
AYWW
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
2N5087G
2N5087RLRAG
Package
TO−92
(Pb−Free)
TO−92
(Pb−Free)
Shipping
†
5000 Units / Bulk
2000/T
ape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
April, 2013
−
Rev. 5
1
Publication Order Number:
2N5087/D
2N5087
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
Collector−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100
mAdc,
V
CE
= 5.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc) (Note 1)
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
h
FE
250
250
250
−
−
800
−
−
0.3
0.85
−
(I
C
= 1.0 mAdc, I
B
= 0)
(I
C
= 100
mAdc,
I
E
= 0)
(V
CB
= 35 Vdc, I
E
= 0)
(V
EB
= 3.0 Vdc, I
C
= 0)
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
50
50
−
−
−
−
50
50
Vdc
Vdc
nAdc
nAdc
Symbol
Min
Max
Unit
Collector−Emitter Saturation Voltage
Base−Emitter On Voltage
SMALL−SIGNAL CHARACTERISTICS
Current−Gain
−
Bandwidth Product
Collector−Base Capacitance
Small−Signal Current Gain
Noise Figure
V
CE(sat)
V
BE(on)
Vdc
Vdc
(I
C
= 500
mAdc,
V
CE
= 5.0 Vdc, f = 20 MHz)
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz)
f
T
C
cb
h
fe
NF
40
−
250
−
−
−
4.0
900
2.0
2.0
MHz
pF
−
dB
(I
C
= 20
mAdc,
V
CE
= 5.0 Vdc, R
S
= 10 kW, f = 10 Hz/15.7 kHz)
(I
C
= 100
mAdc,
V
CE
= 5.0 Vdc, R
S
= 3.0 kW, f = 1.0 kHz)
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
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2
2N5087
TYPICAL NOISE CHARACTERISTICS
(V
CE
=
−5.0
Vdc, T
A
= 25°C)
10
7.0
en, NOISE VOLTAGE (nV)
5.0
I
C
= 10
mA
30
mA
3.0
2.0
1.0 mA
100
mA
300
mA
BANDWIDTH = 1.0 Hz
R
S
≈
0
In, NOISE CURRENT (pA)
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
1.0
10
20
50
100 200
500 1.0 k
f, FREQUENCY (Hz)
2.0 k
5.0 k
10 k
0.1
10
20
50
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k
10 k
300
mA
100
mA
30
mA
10
mA
I
C
= 1.0 mA
BANDWIDTH = 1.0 Hz
R
S
≈ ∞
Figure 1. Noise Voltage
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
20
30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
500 700 1.0 k
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
20
30
Figure 2. Noise Current
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500 700 1.0 k
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
RS , SOURCE RESISTANCE (OHMS)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
20
30
50 70 100
10 Hz to 15.7 kHz
Noise Figure is Defined as:
NF
+
20 log10
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200 300
500 700 1.0 k
I
C
, COLLECTOR CURRENT (mA)
en2
)
4KTRS
)
In 2RS2 1 2
4KTRS
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
I
n
= Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10
−23
j/°K)
T = Temperature of the Source Resistance (°K)
R
S
= Source Resistance (Ohms)
Figure 5. Wideband
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3
2N5087
TYPICAL STATIC CHARACTERISTICS
400
T
J
= 125°C
25°C
h FE , DC CURRENT GAIN
200
- 55°C
100
80
60
40
0.003 0.005
V
CE
= 1.0 V
V
CE
= 10 V
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
I
C
, COLLECTOR CURRENT (mA)
3.0
5.0 7.0
10
20
30
50 70 100
Figure 6. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
T
A
= 25°C
0.8
I
C
= 1.0 mA
10 mA
50 mA
100 mA
IC, COLLECTOR CURRENT (mA)
100
T
A
= 25°C
PULSE WIDTH = 300
ms
80 DUTY CYCLE
≤
2.0%
300
mA
60
I
B
= 400
mA
350
mA
250
mA
200
mA
150
mA
0.6
0.4
40
100
mA
50
mA
0.2
20
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
I
B
, BASE CURRENT (mA)
0
5.0 10
20
0
5.0
10
15
20
25
30
35
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
Figure 7. Collector Saturation Region
Figure 8. Collector Characteristics
T
J
= 25°C
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE(on)
@ V
CE
= 1.0 V
0.4
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
0.1
0.2
0.5 1.0 2.0
5.0
10
20
I
C
, COLLECTOR CURRENT (mA)
50
100
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.4
1.6
*APPLIES for I
C
/I
B
≤
h
FE
/2
0.8
*q
VC
for V
CE(sat)
0
- 55°C to 25°C
0.8
25°C to 125°C
1.6
q
VB
for V
BE
0.2
- 55°C to 25°C
25°C to 125°C
2.4
0.1
0.5 1.0 2.0
5.0
10 20
I
C
, COLLECTOR CURRENT (mA)
50
100
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
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4
2N5087
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
100
70
50
30
20
t
d
@ V
BE(off)
= 0.5 V
10
7.0
5.0
1.0
t
r
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25°C
t, TIME (ns)
1000
700
500
300
200
100
70
50
30
20
10
-1.0
t
s
V
CC
= - 3.0 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t, TIME (ns)
t
f
2.0
3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mA)
50 70
100
- 2.0 - 3.0 - 5.0 - 7.0 -10
- 20 - 30
I
C
, COLLECTOR CURRENT (mA)
- 50 - 70 -100
Figure 11. Turn−On Time
f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
Figure 12. Turn−Off Time
500
T
J
= 25°C
300
200
V
CE
= 20 V
5.0 V
C, CAPACITANCE (pF)
10
T
J
= 25°C
7.0
C
ib
5.0
3.0
2.0
C
ob
100
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 13. Current−Gain — Bandwidth Product
Figure 14. Capacitance
20
10
hie , INPUT IMPEDANCE (k
Ω
)
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5
1.0 2.0
5.0
10
20
I
C
, COLLECTOR CURRENT (mA)
50
100
hoe , OUTPUT ADMITTANCE (
m
mhos)
V
CE
= -10 Vdc
f = 1.0 kHz
T
A
= 25°C
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
0.1
0.2
0.5 1.0 2.0
5.0
10
20
I
C
, COLLECTOR CURRENT (mA)
50
100
V
CE
= 10 Vdc
f = 1.0 kHz
T
A
= 25°C
Figure 15. Input Impedance
Figure 16. Output Admittance
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