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2SC4100T107/M

Description
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size101KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric View All

2SC4100T107/M Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

2SC4100T107/M Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-based maximum capacity1 pF
Collector-emitter maximum voltage19 V
ConfigurationSINGLE
Minimum DC current gain (hFE)39
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)1100 MHz
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