2N6127 datasheet, PDF - EEWORLD Datasheet

2N6127: Description10A, 80V, PNP, Si, POWER TRANSISTOR, TO-61; CategoryDiscrete semiconductor The transistor; File Size60KB，1 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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10A, 80V, PNP, Si, POWER TRANSISTOR, TO-61

Parameter Name	Attribute value
package instruction	POST/STUD MOUNT, O-MUPM-D3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-61
JESD-30 code	O-MUPM-D3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	PNP
Maximum power dissipation(Abs)	67 W
Certification status	Not Qualified
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Transistor component materials	SILICON
Nominal transition frequency (fT)	40 MHz
Base Number Matches	1

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