2SC1740LN/SE datasheet, PDF - EEWORLD Datasheet

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2SC1740LN/SE: DescriptionSmall Signal Bipolar Transistor, 0.15A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92; CategoryDiscrete semiconductor The transistor; File Size167KB，4 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

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2SC1740LN/SE Overview

Small Signal Bipolar Transistor, 0.15A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

2SC1740LN/SE Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	ISOLATED
Maximum collector current (IC)	0.15 A
Collector-based maximum capacity	3.5 pF
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	270
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	180 MHz
VCEsat-Max	0.4 V
Base Number Matches	1

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2SC1740LN/SE Related Products

	2SC1740LN/SE	2SC1740LN/RE	2SC1740LNT93/RE	2SC1740SLN/SE	2SC1740LNT93/SE	2SC1740SLNTP/SE	2SC1740SLN/RE	2SC1740SLNTP/RE
Description	Small Signal Bipolar Transistor, 0.15A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.15A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.15A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.15A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.15A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 0.15A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.15A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.15A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	IN-LINE, R-PSIP-T3	CYLINDRICAL, O-PBCY-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A
Collector-based maximum capacity	3.5 pF	3.5 pF	3.5 pF	3.5 pF	3.5 pF	3.5 pF	3.5 pF	3.5 pF
Collector-emitter maximum voltage	40 V	40 V	40 V	40 V	40 V	40 V	40 V	40 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	270	180	180	270	270	270	180	180
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	R-PSIP-T3	O-PBCY-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	RECTANGULAR	ROUND	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	IN-LINE	CYLINDRICAL	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	SINGLE	BOTTOM	SINGLE	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	180 MHz	180 MHz	180 MHz	180 MHz	180 MHz	180 MHz	180 MHz	180 MHz
VCEsat-Max	0.4 V	0.4 V	0.4 V	0.4 V	0.4 V	0.4 V	0.4 V	0.4 V
Base Number Matches	1	1	1	1	1	1	1	1

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