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2N7228TX

Description
Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
CategoryDiscrete semiconductor    The transistor   
File Size32KB,1 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
Download Datasheet Parametric View All

2N7228TX Overview

Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

2N7228TX Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, S-PSFM-T3
Reach Compliance Codeunknow
Other featuresRADIATION HARDENED
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)12 A
Maximum drain-source on-resistance0.415 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment150 W
Certification statusNot Qualified
GuidelineMILITARY STANDARD (USA)
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
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