General Purpose Transistor (50V, 0.15A)
2SA1774EB
Applications
General purpose small signal amplifier.
Features
1) Excellent h
FE
linearity.
2) Complements the 2SC4617EB.
0.26
Dimensions
(Unit : mm)
EMT3F
1.6
0.7
1.6
0.86 0.37
(3)
(1)
0.5 0.5
1.0
(2)
0.13
Each lead has same dimensions
(1) Base
(2) Emitter
(3) Collector
∗ =
Denotes h
FE
Abbreviated symbol : F
∗
Absolute maximum
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1
Pw=1ms Single pulse
∗2
Each terminal mounted on a recommended land
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj
Tstg
∗1
∗2
Limits
−60
−50
−6
−150
−200
150
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
Electrical characteristics
(Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−50
−60
−6
−
−
−
82
−
−
Typ.
−
−
−
−
−
−
−
140
4.0
Max.
−
−
−
−100
−100
−0.5
560
−
5.0
Unit
V
V
V
nA
nA
V
−
MHz
pF
I
C
=−1mA
I
C
=−50µA
I
E
=−50µA
V
CB
=−60V
V
EB
=−6V
I
C
/I
B
=−50mA/−5mA
V
CE
=−6V, I
C
=−1mA
V
CE
=−12V, I
E
=2mA, f=100MHz
V
CE
=−12V, I
E
=0A, f=1MHz
Conditions
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○
2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.03 - Rev.B
0.45
0.37
Structure
PNP silicon epitaxial.
planar transistor.
0.45
2SA1774EB
h
FE
rank categories
Rank
h
FE
P
82 to 180
Q
120 to 270
R
180 to 390
S
270 to 560
Data Sheet
Electrical characterristic curves
−50
COLLECTOR CURRENT : Ic (
mA)
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR CURRENT : I
C
(
mA
)
Ta=100˚C
25˚C
−40˚C
V
CE
=
−6V
−10
−35.0
Ta=25˚C
−31.5
−28.0
−24.5
−100
Ta=25˚C
−500
−450
−400
−350
−300
−8
−80
−6
−21.0
−17.5
−60
−250
−200
−4
−14.0
−10.5
−40
−150
−100
−2
−7.0
−3.5µA
−20
−50µA
I
B
=0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : V
BE
(
V)
0
−0.4
−0.8
−1.2
−1.6
I
B
=0
−2.0
0
−1
−2
−3
−4
−5
COLLECTOR TO MITTER VOLTAGE : V
CE
(
V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics (I)
Fig.3 Grounded emitter output
characteristics (II)
Ta=25˚C
V
CE
=
−5V
−3V
−1V
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
500
500
Ta=100˚C
25˚C
−1
Ta=25˚C
DC CURRENT GAIN : h
FE
DC CURRENT GAIN : h
FE
−0.5
200
200
−40˚C
100
−0.2
I
C
/I
B
=50
−0.1
20
10
100
50
50
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
−0.2 −0.5 −1
−2
V
CE
=
−6V
−5 −10 −20 −50 −100
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR CURRENT : I
C
(
mA)
COLLECTOR CURRENT : I
C
(
mA)
Fig.4 DC current gain vs.
collector current (I)
Fig.5 DC current gain vs.
collector current (II)
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
l
C
/l
B
=10
TRANSITION FREQUENCY : f
T
(
MHz)
Ta=25˚C
V
CE
=
−
12V
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE
: Cib (
pF)
−1
1000
20
Cib
−0.5
500
10
Co
b
Ta=25˚C
f=1MHz
I
E
=0A
I
C
=0A
−0.2
Ta=100˚C
25˚C
−40˚C
200
5
−0.1
100
2
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
50
0.5
1
2
5
10
20
50
100
−0.5
−1
−2
−5
−10
−20
COLLECTOR CURRENT : I
C
(
mA)
EMITTER CURRENT : I
E
(
mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
Fig.8 Gain bandwidth product vs.
emitter current
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
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○
2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.03 - Rev.B
Notice
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However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
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