IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT137-600G0
4Q Triac
12 June 2014
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended
for use in general purpose bidirectional switching and phase control applications.
2. Features and benefits
•
•
•
•
•
High blocking voltage capability
Least sensitive gate for highest noise immunity
High minimum I
GT
for guaranteed immunity to gate noise
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
3. Applications
•
•
•
•
General purpose motor controls
Lighting controls
Applications where only positive gate drive is avaliable
Applications where gate noise or interference may occur
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
T
j
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
junction temperature
RMS on-state current
full sine wave; T
mb
≤ 102 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
10
-
50
mA
10
-
50
mA
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
600
65
125
8
Unit
V
A
°C
A
Scan or click this QR code to view the latest information for this product
TO
-2
20A
B
NXP Semiconductors
BT137-600G0
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
10
10
Typ
-
-
Max
50
100
Unit
mA
mA
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
200
-
-
V/µs
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT137-600G0
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
7. Marking
Table 4.
Marking codes
Marking code
BT137-600G0
Type number
BT137-600G0
BT137-600G0
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
12 June 2014
2 / 13
NXP Semiconductors
BT137-600G0
4Q Triac
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 102 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
600
8
65
71
21
50
50
50
10
2
5
0.5
150
125
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
2
t
p
= 10 ms; sine-wave pulse
I
T
= 12 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G+
I
T
= 12 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G-
I
T
= 12 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G-
I
T
= 12 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G+
A s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
I
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
-
-40
-
BT137-600G0
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
12 June 2014
3 / 13
NXP Semiconductors
BT137-600G0
4Q Triac
10
I
T(RMS)
(A)
8
003aae689
25
I
T(RMS)
(A)
20
003aae692
6
15
4
10
2
5
0
- 50
0
50
100
T
mb
(°C)
150
0
10- 2
10- 1
1
10
surge duration (s)
Fig. 1.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 2.
12
f = 50 Hz
T
mb
≤ 102 °C
RMS on-state current as a function of surge
duration; maximum values
003aae690
P
tot
(W)
8
conduction
form
angle
factor
(degrees)
a
30
4
60
2.8
90
2.2
120
1.9
180
1.57
α = 180°
120°
α
90°
60°
30°
4
0
0
2
4
6
8
I
T(RMS)
(A)
10
α = conduction angle
a = form factor = I
T(RMS)
/I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
BT137-600G0
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
12 June 2014
4 / 13
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