2SC3077TMG datasheet, PDF - EEWORLD Datasheet

2SC3077TMG: DescriptionRF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN; CategoryDiscrete semiconductor The transistor; File Size275KB，6 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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2SC3077TMG Overview

RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.02 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Minimum power gain (Gp)	20 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1100 MHz
Base Number Matches	1

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