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PBSS5112PAP

Description
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor
File Size244KB,17 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

PBSS5112PAP Overview

120 V, 1 A PNP/PNP low VCEsat (BISS) transistor

PBSS5112PAP
30 November 2012
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor
Product data sheet
1. Product profile
1.1 General description
PNP/PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4112PANP. NPN/NPN complement: PBSS4112PAN.
1.2 Features and benefits
Very low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain h
FE
at high I
C
Reduced Printed-Circuit Board (PCB) requirements
High energy efficiency due to less heat generation
AEC-Q101 qualified
1.3 Applications
Load switch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
Per transistor
V
CEO
I
C
I
CM
V
EBO
Per transistor
R
CEsat
collector-emitter
saturation resistance
I
C
= -500 mA; I
B
= -50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-
440
collector-emitter
voltage
collector current
peak collector current
emitter-base voltage
single pulse; t
p
≤ 1 ms
open collector
open base
-
-
-
-
-
-
-
-
-120
-1
-1.5
-7
V
A
A
V
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
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