ON Semiconductort
Low Noise Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
BC559
–30
–30
–5.0
–100
625
5.0
1.5
12
–55 to +150
BC560
–45
–50
Unit
Vdc
Vdc
Vdc
mAdc
BC559B, C
BC560C
1
mW
mW/°C
Watt
mW/°C
°C
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
2
BASE
3
EMITTER
COLLECTOR
1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= –10
µAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= –10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= –30 Vdc, I
E
= 0)
(V
CB
= –30 Vdc, I
E
= 0, T
A
= +125°C)
Emitter Cutoff Current
(V
EB
= –4.0 Vdc, I
C
= 0)
V
(BR)CEO
BC559
BC560
V
(BR)CBO
BC559
BC560
V
(BR)EBO
I
CBO
—
—
I
EBO
—
—
—
—
–15
–5.0
–15
nAdc
µAdc
nAdc
–30
–50
–5.0
—
—
—
—
—
—
Vdc
–30
–45
—
—
—
—
Vdc
Vdc
©
Semiconductor Components Industries, LLC, 2001
255
September, 2001 – Rev. 0
Publication Order Number:
BC559B/D
BC559B, C BC560C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= –10
µAdc,
V
CE
= –5.0 Vdc)
(I
C
= –2.0 mAdc, V
CE
= –5.0 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= –10 mAdc, I
B
= –0.5 mAdc)
(I
C
= –10 mAdc, I
B
= see note 1)
(I
C
= –100 mAdc, I
B
= –5.0 mAdc, see note 2)
Base–Emitter Saturation Voltage
(I
C
= –100 mAdc, I
B
= –5.0 mAdc)
Base–Emitter On Voltage
(I
C
= –10
µAdc,
V
CE
= –5.0 Vdc)
(I
C
= –100
µAdc,
V
CE
= –5.0 Vdc)
(I
C
= –2.0 mAdc, V
CE
= –5.0 Vdc)
h
FE
BC559B
BC559C/560C
BC559B
BC559C/560C
V
CE(sat)
—
—
—
V
BE(sat)
V
BE(on)
—
—
–0.55
–0.52
–0.55
–0.62
—
—
–0.7
—
–0.075
–0.3
–0.25
–1.1
–0.25
–0.6
—
—
Vdc
Vdc
100
100
180
380
150
270
290
500
—
—
460
800
Vdc
—
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= –10 mAdc, V
CE
= –5.0 Vdc, f = 100 MHz)
Collector–Base Capacitance
(V
CB
= –10 Vdc, I
E
= 0, f = 1.0 MHz)
Small–Signal Current Gain
(I
C
= –2.0 mAdc, V
CE
= –5.0 V, f = 1.0 kHz)
BC559B
BC559C/BC560C
NF
1
NF
2
f
T
C
cbo
h
fe
240
450
—
—
330
600
0.5
—
500
900
dB
2.0
10
—
—
250
2.5
—
—
MHz
pF
—
Noise Figure
(I
C
= –200
µAdc,
V
CE
= –5.0 Vdc, R
S
= 2.0 kΩ, f = 1.0 kHz)
(I
C
= –200
µAdc,
V
CE
= –5.0 Vdc, R
S
= 100 kΩ, f = 1.0 kHz,
∆f
= 200 kHz)
NOTES:
1. I
B
is value for which I
C
= –11 mA at V
CE
= –1.0 V.
2. Pulse test = 300
µs
– Duty cycle = 2%.
Figure 15.
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256
BC559B, C BC560C
2.0
hFE, NORMALIZED DC CURRENT GAIN
1.5
1.0
0.8
0.6
0.4
0.3
0.2
-0.2
V
CE
= -10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
-0.5
-1.0 -2.0
-5.0 -10 -20
-50 -100 -200
I
C
, COLLECTOR CURRENT (mAdc)
0
-0.1
-0.2
V
CE(sat)
@ I
C
/I
B
= 10
-0.5 -1.0 -2.0
-5.0 -10 -20
I
C
, COLLECTOR CURRENT (mAdc)
-50
-100
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= -10 V
Figure 1. Normalized DC Current Gain
BANDWIDTH PRODUCT (MHz)
Figure 2. “Saturation” and “On” Voltages
400
300
C, CAPACITANCE (pF)
200
100
80
60
40
30
20
10
7.0
5.0
C
ib
T
A
= 25°C
V
CE
= -10 V
T
A
= 25°C
3.0
2.0
C
ob
f T, CURRENT-GAIN
-0.5 -0.7 -1.0
-2.0
-5.0 -7.0 -10
-20
I
C
, COLLECTOR CURRENT (mAdc)
-50
1.0
-0.4 -0.6
-1.0
-2.0
-4.0
-10
V
R
, REVERSE VOLTAGE (VOLTS)
-20
-40
Figure 3. Current–Gain — Bandwidth Product
Figure 4. Capacitance
r b, BASE SPREADING RESISTANCE (OHMS)
170
160
150
140
130
120
-0.1
V
CE
= -10 V
f = 1.0 kHz
T
A
= 25°C
-0.2
-0.5
-1.0
-2.0
I
C
, COLLECTOR CURRENT (mAdc)
-5.0
-10
Figure 5. Base Spreading Resistance
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