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BUL65BR3

Description
Power Bipolar Transistor, 8A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin, IPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size52KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric View All

BUL65BR3 Overview

Power Bipolar Transistor, 8A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin, IPAK-3

BUL65BR3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)8 A
Collector-emitter maximum voltage250 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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