2SB1236TV3/PR datasheet, PDF - EEWORLD Datasheet

2SB1236TV3/PR: DescriptionSmall Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon,; CategoryDiscrete semiconductor The transistor; File Size102KB，2 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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2SB1236TV3/PR Overview

Small Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon,

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	82
JESD-30 code	R-PSIP-T3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
VCEsat-Max	2 V
Base Number Matches	1

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