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DMC506E2

Description
For high-frequency amplification DMC206E2 in SMini6 type package
CategoryDiscrete semiconductor    The transistor   
File Size301KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DMC506E2 Overview

For high-frequency amplification DMC206E2 in SMini6 type package

DMC506E2 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.015 A
Collector-emitter maximum voltage20 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)65
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-F6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)650 MHz
This product complies with the RoHS Directive (EU 2002/95/EC).
DMC506E2
Silicon NPN epitaxial planar type
For high-frequency amplification
DMC206E2 in SMini6 type package
Features
High transition frequency f
T
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
SMini6-F3-B
Package dimension clicks here.→
Click!
Basic Part Number
Dual DSC2G02 (Individual)
Packaging
DMC506E20R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Name
Pin
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
Marking Symbol: D2
Internal Connection
(C1)
6
(B1)
5
(C2)
4
Tr2
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
30
20
3
15
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Tr1
1
(E1)
2
(E2)
3
(B2)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Base-emitter voltage
Forward current transfer ratio
Transition frequency
Reverse transfer capacitance(Common emitter)
Power gain
Noise
figure
Symbol
V
CBO
V
EBO
V
BE
h
FE
f
T
C
re
PG
NF
Conditions
I
C
= 10 µA, I
E
= 0
I
E
= 10 µA, I
C
= 0
V
CE
= 6 V, I
C
= 1 mA
V
CE
= 6 V, I
C
= 1 mA
V
CE
= 6 V, I
C
= 1 mA
V
CE
= 6 V, I
C
= 1 mA, f = 10.7 MHz
V
CE
= 6 V, I
C
= 1 mA, f = 100 MHz
V
CE
= 6 V, I
C
= 1 mA, f = 100 MHz
65
450
650
0.6
24
3.3
Min
30
3
0.72
260
Typ
Max
Unit
V
V
V
MHz
pF
dB
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2012
Ver. CED
1

DMC506E2 Related Products

DMC506E2 DMC506E20R
Description For high-frequency amplification DMC206E2 in SMini6 type package For high-frequency amplification DMC206E2 in SMini6 type package
Is it Rohs certified? conform to conform to
Maker Panasonic Panasonic
package instruction SMALL OUTLINE, R-PDSO-F6 HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, SC-113DB, 6 PIN
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.015 A 0.015 A
Collector-emitter maximum voltage 20 V 20 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 65 65
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JESD-30 code R-PDSO-F6 R-PDSO-F6
Number of components 2 2
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.15 W 0.15 W
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 650 MHz 650 MHz

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