2N7008
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
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Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral SOURCE-DRAIN diode
High input impedance and high gain
Complementary N- and P-Channel devices
General Description
The Supertex 2N7008 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
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Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
2N7008
2N7008-G
Package
BV
DSS
/BV
DGS
(V)
60
R
DS(ON)
(max)
(Ω)
7.5
I
D(ON)
(min)
(mA)
500
TO-92
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Parameter
DRAIN to SOURCE voltage
DRAIN to GATE voltage
GATE to SOURCE voltage
Operating and storage temperature
Soldering temperature
1
Value
BV
DSS
BV
DGS
±30V
-55°C to +150°C
+300°C
Pin Configuration
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Note 1.
Distance of 1.6mm from case for 10 seconds.
S G D
TO-92
(front view)
2N7008
Electrical Characteristics
(T = 25°C unless otherwise specified)
A
Symbol
Parameter
Min
Typ
Max
Units
Conditions
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
(ON)
t
(OFF)
V
SD
DRAIN-to-SOURCE breakdown
voltage
GATE threshold voltage
GATE body leakage current
Zero GATE voltage drain current
ON-state DRAIN current
Static DRAIN-to-SOURCE
ON-state resistance
Forward transconductance
Input capacitance
Common SOURCE output
capacitance
Reverse transfer capacitance
Turn-ON time
Turn-OFF time
Diode forward voltage drop
60
1.0
-
-
-
500
-
-
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
100
1.0
500
-
7.5
7.5
-
50
25
5
20
20
1.5
V
V
nA
µA
µA
mA
Ω
mmho
V
GS
= 0V, I
D
= -10µA
V
GS
= V
DS
, I
D
= 250µA
V
GS
= ±30V, V
DS
= 0V
V
GS
= 0V, V
DS
= 50V
V
GS
= 0V, V
DS
= 50V,
T
A
= 125
O
C
V
GS
= 10V, V
DS
≥ 2.0V
DS(ON)
V
GS
= 5.0V, I
D
= 50mA
V
GS
= 10V, I
D
= 500mA
V
DS
= 10V, I
D
= 0.2A
V
GS
= 0V, V
DS
= 25V,
f = 1.0MHz
pF
ns
V
V
DD
= 30V, I
D
= 200mA,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= 150mA
Notes:
1.All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Thermal Characteristics
Device
2N7008
Package
TO-92
I
D
(continuous)
*
(mA)
230
I
D
(pulsed)
(A)
1.3
Power Dissipation
@T
C
= 25
O
C
(W)
1.0
θ
ja
O
( C/W)
170
θ
jc
O
( C/W)
125
I
DR
*
(mA)
230
I
DRM
(A)
1.3
Notes:
* I
D
(continuous) is limited by max rated T
j
.
Switching Waveforms and Test Circuit
10V
V
DD
R
L
OUTPUT
90%
INPUT
0V
10%
t
(ON)
PULSE
GENERATOR
t
(OFF)
t
r
t
d(OFF)
t
F
R
GEN
t
d(ON)
V
DD
10%
10%
INPUT
D.U.T.
OUTPUT
0V
90%
90%
2
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