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HIT468_11

Description
Silicon NPN Epitaxial
File Size66KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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HIT468_11 Overview

Silicon NPN Epitaxial

Preliminary
Datasheet
HIT468
Silicon NPN Epitaxial
Features
Low frequency power amplifier
Complementary pair with HIT562
R07DS0447EJ0400
(Previous: REJ03G1502-0300)
Rev.4.00
Jun 14, 2011
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
1. Emitter
2. Collector
3. Base
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note : 1. PW
10 ms, Duty cycle
20%
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C (peak)
*
1
P
C
Tj
Tstg
Ratings
45
25
6
1.0
1.5
0.8
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
R07DS0447EJ0400 Rev.4.00
Jun 14, 2011
Page 1 of 4

HIT468_11 Related Products

HIT468_11 HIT468-HQ HIT468-TZ-EQ HIT468-TZ-HQ
Description Silicon NPN Epitaxial Silicon NPN Epitaxial Silicon NPN Epitaxial Silicon NPN Epitaxial
Is it lead-free? - Lead free Lead free Lead free
Is it Rohs certified? - conform to conform to conform to
Parts packaging code - TO-92 TO-92 TO-92
package instruction - CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts - 3 3 3
Reach Compliance Code - compli compliant compli
ECCN code - EAR99 EAR99 EAR99
Other features - NOT FOR AUTOMOTIVE OR INDUSTRIAL USE NOT FOR AUTOMOTIVE OR INDUSTRIAL USE NOT FOR AUTOMOTIVE OR INDUSTRIAL USE
Maximum collector current (IC) - 1 A 1 A 1 A
Collector-emitter maximum voltage - 25 V 25 V 25 V
Configuration - SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) - 40 40 40
JESD-30 code - O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components - 1 1 1
Number of terminals - 3 3 3
Maximum operating temperature - 150 °C 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - ROUND ROUND ROUND
Package form - CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - NPN NPN NPN
Maximum power dissipation(Abs) - 0.8 W 0.8 W 0.8 W
Certification status - Not Qualified Not Qualified Not Qualified
surface mount - NO NO NO
Terminal form - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location - BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications - AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials - SILICON SILICON SILICON

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