Polar
TM
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFV36N50PS
IXFV36N50P
IXFH36N50P
IXFT36N50P
V
DSS
I
D25
t
rr
R
DS(on)
=
=
≤
≤
500V
36A
Ω
170mΩ
200ns
PLUS220SMD (IXFV...S)
G
S
D (Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Maximum Ratings
500
500
±30
±40
36
90
36
1.5
10
540
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
g
PLUS220 (IXFV)
G
D
S
D (Tab)
TO-268 (IXFT)
G
S
D (Tab)
TO-247 (IXFH)
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
Mounting Force
PLUS220
TO-268
TO-247
(PLUS220)
300
260
1.13/10
20..120 /4.5..27
4.0
4.0
6.0
G
D
S
D (Tab)
G = Gate
S = Source
Features
D
= Drain
Tab = Drain
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
500
3.0
5.0
±100
V
V
nA
Low Package Inductance
Fast Intrinsic Rectifier
Low R
DS(on)
and Q
G
Advantages
High Power Density
Easy to Mount
Space Savings
25
μA
500
μA
170 mΩ
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2011 IXYS CORPORATION, All Rights Reserved
DS99364F(07/11)
IXFH36N50P IXFV36N50P
IXFT36N50P IXFV36N50PS
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
(TO-247 & PLUS220)
0.25
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
23
36
5500
510
40
25
27
75
21
93
30
31
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.23
°C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 25A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
0.8
8.0
Characteristic Values
Min.
Typ.
Max.
36
144
1.5
A
A
V
200 ns
μC
A
Note
1. Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFH36N50P IXFV36N50P
IXFT36N50P IXFV36N50PS
TO-268 Outline
PLUS220 (IXFV) Outline
Terminals: 1 - Gate
3 - Source
2,4 - Drain
TO-247 Outline
PLUS220SMD (IXFV_S) Outline
1
2
3
∅
P
e
Terminals: 1 - Gate
3 - Source
2 - Drain
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A
1
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
© 2011 IXYS CORPORATION, All Rights Reserved
IXFH36N50P IXFV36N50P
IXFT36N50P IXFV36N50PS
Fig. 1. Output Characteristics @ T
J
= 25ºC
36
V
GS
= 10V
7V
30
60
24
80
V
GS
= 10V
70
7V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
I
D
- Amperes
6V
18
50
40
30
6.5V
12
5V
20
6
4V
0
0
1
2
3
4
5
6
7
10
6V
5.5V
5V
0
0
5
10
15
20
25
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
36
V
GS
= 10V
7V
30
6V
3.4
Fig. 4. R
DS(on)
Normalized to I
D
= 18A Value vs.
Junction Temperature
V
GS
= 10V
3.0
2.6
2.2
I
D
= 18A
1.8
1.4
1.0
R
DS(on)
- Normalized
I
D
= 36A
24
I
D
- Amperes
5.5V
18
12
5V
6
4.5V
0
0
2
4
6
8
10
12
14
16
0.6
0.2
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 18A Value vs.
Drain Current
3.4
V
GS
= 10V
3.0
T
J
= 125ºC
40
35
30
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
2.6
2.2
I
D
- Amperes
25
20
15
10
5
0
1.8
T
J
= 25ºC
1.4
1.0
0.6
0
10
20
30
40
50
60
70
80
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH36N50P IXFV36N50P
IXFT36N50P IXFV36N50PS
Fig. 7. Input Admittance
70
50
60
40
T
J
= 125ºC
25ºC
- 40ºC
T
J
= - 40ºC
Fig. 8. Transconductance
50
25ºC
g
f s
- Siemens
I
D
- Amperes
30
40
125ºC
30
20
20
10
10
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
0
10
20
30
40
50
60
70
80
90
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
100
90
80
70
10
9
8
7
V
DS
= 250V
I
D
=18A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
60
50
40
30
20
10
0
6
5
4
3
2
1
0
0
10
20
30
40
50
60
70
80
90
100
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
100
Fig. 12. Forward-Bias Safe Operating Area
R
DS(on)
Limit
Capacitance - PicoFarads
Ciss
25µs
1,000
I
D
- Amperes
100µs
Coss
10
1ms
10ms
100
DC
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
1
0
5
10
15
20
25
30
35
40
10
100
f
= 1 MHz
10
Crss
1,000
V
DS
- Volts
V
DS
- Volts
© 2011 IXYS CORPORATION, All Rights Reserved
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