AVT-52663
DC – 6000 MHz
InGaP HBT Gain Block
Data Sheet
Description
Avago Technologies’ AVT-52663 is an economical, easy-
to-use, general purpose InGaP HBT MMIC gain block
amplifier utilizing Darlington pair configuration housed in
a 6-lead (SOT-363) surface mount plastic package.
The Darlington feedback structure provides inherent
broad bandwidth performance, resulting in useful ope-
rating frequency up to 6 GHz. This is an ideal device for
small-signal gain cascades or IF amplification.
AVT-52263 is fabricated using advanced InGaP HBT
(Hetero-junction Bipolar Transistor) technology that
offers state-of-the-art reliability, temperature stability and
performance consistency.
Features
x
Small signal gain amplifier
x
Operating frequency DC to 6 GHz
x
Unconditionally stable
x
50 Ohm input & output
x
Flat, Broadband Frequency Response up to 2 GHz
x
Industry standard SOT-363
x
Lead-free, RoHS compliant, Green
Specifications
2 GHz, 5V Vcc, 45 mA (typical)
x
15.3 dB Gain
x
12.7 dBm P1dB
x
27 dBm OIP3
Component Image
GND
Output
& V
d
x
4 dB NF
x
15 dB IRL and ORL
52X
Top View
GND
Input
GND
GND
Applications
x
Cellular / PCS / 3G base station
x
Wireless Data / WLAN
x
WiMAX / WiBRO
x
CATV & Cable modem
x
ISM
Notes:
Package marking provides orientation and identification
“52” = Device Code
“X” = Month of Manufacture
“x” = Pin 1
Typical Biasing Configuration
V
CC
= 5V
R
bias
C
byp
C
block
Pin 3
C
byp
R
bias
= (V
CC
- V
d
)/I
d
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (120V)
ESD Human Body Model (1200V)
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
RFin
Pin 6
V
d
Pin 1, 2, 4, 5
(GND)
C
block
RFout
Absolute Maximum Rating
[1]
T
A
=25°C
Symbol
I
d
P
IN,MAX
P
DISS
T
OPT
T
J,MAX
T
STG
Thermal Resistance
Units
mA
dBm
mW
°C
°C
°C
Parameter
Device Current
CW RF Input Power
Total Power Dissipation
[3]
Operating Temperature
Junction Temperature
Storage Temperature
Absolute Max.
90
18
394
-40 to 85
150
-65 to 150
Thermal Resistance
[2]
T
JC
= 149°C/W
(I
d
= 45 mA, T
C
= 85°C)
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infrared
measurement technique.
3. Ground lead temperature is 25°C. Derate
6.7mW/°C for T
C
>91°C.
Electrical Specifications
[4]
T
A
= 25°C, Zo = 50
:,
V
CC
= 5 V, R
bias
= 22
:,
P
in
= -15 dBm (unless specified otherwise)
Symbol
I
d
G
p
'G
p
f
3dB
OIP3
[5]
S11
S22
S12
P1dB
NF
Parameter and Test Condition
Device Current
Power Gain
Gain Flatness
3 dB Bandwidth
Output 3
rd
Intercept Point
Input Return Loss, 50: source
Output Return Loss, 50: load
Reverse Isolation
Output Power at 1dB Gain Compression
Noise Figure
Frequency
900 MHz
2000 MHz
0.05 - 2 GHz
Units
mA
dB
Min.
42
13.8
Typ.
45.6
16.1
15.5
0.67
5
Max.
49
16.8
GHz
900 MHz
2000 MHz
900 MHz
2000 MHz
900MHz
2000 MHz
900 MHz
2000 MHz
900 MHz
2000 MHz
900 MHz
2000 MHz
dBm
26.2
dB
dB
dB
dBm
dB
30.2
27.7
-21.9
-15.9
-19.1
-15.2
-19.3
-19.8
15.6
15
3.6
4
Notes:
4. Measurements obtained on CPWG line with reference plane at the ends of DUT leads (as shown in Figure 1).
5. OIP3 test condition: F
RF1
- F
RF2
= 10MHz with input power of -15 dBm per tone measured at worse side band.
V
CC
R
bias
Bias Tee
RFin
Zo = 50 Ohm
Pin 6
Pin 3
Pin 1, 2, 4, 5
(GND)
Zo = 50 Ohm
RFout
Figure 1. Block diagram of board used for I
d
, Gain, OIP3, S11, S22, S12, OP1dB and NF measurements.
Circuit losses have been de-embedded from actual measurements.
2
Product Consistency Distribution Charts at 2 GHz, V
cc
= 5 V, R
bias
= 22
:
LSL
USL
LSL
USL
42
43
44
45
46
47
48
49
13.5
14
14.5
15
15.5
16
16.5
17
17.5
Figure 2. I
d
(mA) distribution. LSL = 42, Nominal = 45.6, USL = 49
Figure 3. Gain (dB) distribution. LSL = 13.8, Nominal = 15.2, USL = 16.8
LSL
Notes:
1. Statistical distribution determined from a sample size of 2099
samples taken from 6 different wafers, measured on a production
test board.
2. Future wafers allocated to this product may have typical values
anywhere between the minimum and maximum specification limits.
26
26.5
27
27.5
28
28.5
29
29.5
Figure 4. OIP3 (dBm) distribution. LSL = 26.2, Nominal = 27.7
3
AVT-52663 Typical Performance Curves
T
A
= 25°C, Zo = 50
:,
P
in
= -15 dBm (unless specified otherwise)
18
17
16
P1dB (dBm)
0
1
2
3
4
Frequency (GHz)
5
6
Gain (dB)
15
14
13
12
11
10
17
16
15
14
13
12
11
10
9
8
7
6
5
0
1
2
3
4
Frequency (GHz)
5
6
Figure 5. Gain vs Frequency at I
d
= 45mA
Figure 6. P1dB vs Frequency at I
d
= 45mA
33
31
29
OIP3 (dBm)
27
25
23
21
19
17
15
0
1
2
3
4
Frequency (GHz)
5
6
NF (dB)
7
6
5
4
3
2
1
0
1
2
3
4
Frequency (GHz)
5
6
Figure 7. OIP3 vs Frequency at I
d
= 45mA
Figure 8. NF vs Frequency at I
d
= 45mA
80
70
60
I
d
(mA)
50
40
30
20
10
0
0
1
2
V
d
(V)
Figure 9. I
d
vs V
d
and Temperature
3
4
5
25°C
85°C
-40°C
4
AVT-52663 Typical Performance Curves
T
A
= 25°C, Zo = 50
:,
P
in
= -15 dBm (unless specified otherwise), continued
17
16.5
P1dB (dBm)
16
Gain (dB)
15.5
15
14.5
14
20
30
40
50
I
d
(mA)
60
70
25°C
85°C
-40°C
80
15
20
10
25°C
85°C
-40°C
20
30
40
50
I
d
(mA)
60
70
80
5
Figure 10. Gain vs I
d
and Temperature at 900 MHz
Figure 11. P1dB vs I
d
and Temperature at 900 MHz
40
5.0
4.5
35
OIP3 (dBm)
4.0
30
NF (dB)
3.5
3.0
25
25°C
85°C
-40°C
20
30
40
50
I
d
(mA)
60
70
80
2.5
2.0
20
30
40
50
I
d
(mA)
60
70
25°C
85°C
-40°C
80
20
Figure 12. OIP3 vs I
d
and Temperature at 900 MHz
Figure 13. NF vs I
d
and Temperature at 900 MHz
17
16.5
P1dB (dBm)
25°C
85°C
-40°C
20
30
40
50
I
d
(mA)
60
70
80
16
Gain (dB)
15.5
15
14.5
14
20
15
10
25°C
85°C
-40°C
20
30
40
50
I
d
(mA)
60
70
80
5
Figure 14. Gain vs I
d
and Temperature at 2 GHz
Figure 15. P1dB vs I
d
and Temperature at 2 GHz
5
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