REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
15
REV
SHEET
PREPARED BY
Steve L.Duncan
CHECKED BY
Greg Cecil
APPROVED BY
Charles F. Saffle
DRAWING APPROVAL DATE
13-03-26
REVISION LEVEL
1
2
3
4
5
6
7
8
9
10
11
12
13
14
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil/
MICROCIRCUIT, CMOS, OPERATIONAL
AMPLIFIER, QUAD, MONOLITHIC SILICON
AMSC N/A
SIZE
CAGE CODE
A
67268
SHEET
1 OF
15
5962-10241
DSCC FORM 2233
APR 97
5962-E334-12
1. SCOPE
1.1 Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A
choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When
available, a choice of radiation hardness assurance levels are reflected in the PIN.
1.2 PIN. The PIN shall be as shown in the following example:
5962
H
10241
01
K
X
X
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
\/
Drawing number
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
1.2.1 Radiation hardness assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA
levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
03
Generic number
RHD5900
RHD5901
RHD5902
Circuit function
Quad operational amplifier
Quad operational amplifier, Hi-Z output control
Quad operational amplifier, High speed, Hi-Z output
control
1.2.3 Device class designator. This device class designator shall be a single letter identifying the product assurance level.
All levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K,
and E) or QML Listing (Class G and D). The product assurance levels are as follows:
Device class
K
Device performance documentation
Highest reliability class available. This level is intended for use in space
applications.
Standard military quality class level. This level is intended for use in applications
where non-space high reliability devices are required.
Reduced testing version of the standard military quality class. This level uses the
Class H screening and In-Process Inspections with a possible limited temperature
range, manufacturer specified incoming flow, and the manufacturer guarantees (but
may not test) periodic and conformance inspections (Group A, B, C and D).
Designates devices which are based upon one of the other classes (K, H, or G)
with exception(s) taken to the requirements of that class. These exception(s) must
be specified in the device acquisition document; therefore the acquisition document
should be reviewed to ensure that the exception(s) taken will not adversely affect
system performance.
Manufacturer specified quality class. Quality level is defined by the manufacturers
internal, QML certified flow. This product may have a limited temperature range.
H
G
E
D
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-10241
SHEET
2
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Descriptive designator
See figure 1
Terminals
16
Package style
Flat package with formed leads
1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38534.
1.3 Absolute maximum ratings. 1/
Supply voltage (V
CC
) .............................................................................
Input voltage (V
IN
) range .......................................................................
Junction temperature (T
J
) .....................................................................
Power @ +25°C ....................................................................................
Thermal resistance, Junction to Case (Ө
JC
) ..........................................
Storage temperature range ...................................................................
Lead temperature (soldering, 10 seconds) ...........................................
1.4 Recommended operating conditions.
Supply voltage (V
CC
) range ....................................................................
Input Common Mode (V
CM
) range ..........................................................
Case operating temperature range (T
C
) .................................................
1.5 Radiation features. 2/
Maximum Total Ionizing Dose (TID) ..(dose rate = 50 - 300 rad(Si)/s):
In accordance with MIL-STD-883, method 1019, condition A............
Enhanced Low Dose Rate Sensitvity (ELDRS).....................................
Single Event Phenomenon (SEP) effective linear energy transfer (LET):
No Single Event Latchup (SEL) .........................................................
Single Event Transient (SET) ............................................................
14
2
Neutron Displacement Damage (> 1 x 10 neutrons/cm ) ...................
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-38534 - Hybrid Microcircuits, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 - Test Method Standard Microcircuits.
MIL-STD-1835 - Interface Standard for Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
_________
1/
2/
3/
4/
5/
Stresses above the absolute maximum ratings may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
See section 4.3.5 for the manufacturer's radiation hardness assurance analysis and testing.
Not tested, Immune by 100 percent CMOS technology.
2
2
Single event testing performed at 100 Mev-cm /mg with no latch-up and up to 59 Mev-cm /mg with single event transients
(voltage) limited as specified in Table IB.
See table IB.
+3.0 V dc to +5.5 V dc
V
CC
to V
EE
-55°C to +125°C
+7.0 V dc
V
CC
+0.4 V, V
EE
-0.4 V
+150°C
200 mW
7° C/W
-65°C to +150°C
+300°C
1 Mrad(Si)
3/
≤ 100 MeV-cm /mg 4/ 5/
≤ 59 MeV-cm2/mg 4/ 5/
3/
2
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-10241
SHEET
3
(Copies of these documents are available online at
https://assist.dla.mil/quicksearch/
or from the Standardization Document
Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein.
AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM)
ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by
Heavy Ion Irradiation of Semiconductor Devices.
(Copies of these documents are available online at
http://www.astm.org
or from the American Society for Testing and
Materials, P O Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959)
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3.
REQUIREMENTS
3.1 Item requirements. The individual item performance requirements for device classes D, E, G, H, and K shall be in
accordance with MIL-PRF-38534. Compliance with MIL-PRF-38534 shall include the performance of all tests herein or as
designated in the device manufacturer's Quality Management (QM) plan or as designated for the applicable device class. The
manufacturer may eliminate, modify or optimize the tests and inspections herein, however the performance requirements as
defined in MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not
affect the form, fit, or function of the device for the applicable device class.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38534 and herein.
3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and and as specified on figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Logic diagram(s). The logic diagram(s) shall be as specified on figure 3.
3.2.4 Switching diagram(s). The switching diagram(s) shall be as specified on figure 4.
3.2.5 Radiation exposure circuits. The radiation exposure circuits shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are
as specified in table IA and shall apply over the full specified operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are defined in table IA.
3.5 Marking of device(s). Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with
the PIN listed in 1.2 herein. In addition, the manufacturer's vendor similar PIN may also be marked.
3.6 Data. In addition to the general performance requirements of MIL-PRF-38534, the manufacturer of the device described
herein shall maintain the electrical test data (variables format) from the initial quality conformance inspection group A lot sample,
for each device type listed herein. Also, the data should include a summary of all parameters manually tested, and for those
which, if any, are guaranteed. This data shall be maintained under document revision level control by the manufacturer and be
made available to the preparing activity (DLA Land and Maritime -VA) upon request.
3.7 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to supply to this
drawing. The certificate of compliance (original copy) submitted to DLA Land and Maritime -VA shall affirm that the
manufacturer's product meets the performance requirements of MIL-PRF-38534 and herein.
3.8 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot of
microcircuits delivered to this drawing.
SIZE
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
A
REVISION LEVEL
5962-10241
SHEET
4
TABLE IA. Electrical performance characteristics.
Test
Symbol
Conditions
-55°C
≤
T
C
≤
+125°C
V
CC
= +5.0 V, V
EE
= GND
unless otherwise specified
Group A Device
subgroups types
Min
1,2,3
01,02
03
-3
-4
-100
-100
-1
01,02
03
70
60
70
4.90
Limits
Unit
Max
3
4
100
100
1
pA
pA
nA
dB
mV
Input offset voltage 1/
V
OS
Input offset current 1/
Input bias current 1/
I
OS
I
B
1,2,3
1,3
2
All
All
Common Mode Rejection Ratio
CMRR
4,5,6
Power supply rejection ratio
Output voltage high
Output voltage low
Short circuit output current 2/
PSRR
V
OH
V
OL
I
O(SINK)
R
OUT
= 3.6 kΩ to GND
R
OUT
= 3.6 kΩ to V
CC
V
OUT
to V
CC
4,5,6
1,2,3
1,2,3
1,2,3
All
All
All
01,02
03
dB
V
0.1
V
mA
-30
-130
45
110
2.0
12.0
90
4
23
-75
-290
55
210
I
O(SOURCE)
V
OUT
to V
EE
R
L
= 8 kΩ, Gain = +1
01,02
03
Slew rate 1/
SR
9,10,11
01,02
03
V/µs
Open loop gain 1/
Unity gain bandwidth 1/
A
OL
UGBW
R
L
= 100 kΩ
R
L
= 10 kΩ
4,5,6
4,5,6
All
01,02
03
dB
MHz
Quiescent supply current 1/
I
CCQ
All amplifiers enabled, no
loads
All amplifiers disabled
1,2,3
All
02,03
5.5
300
84
3.5
1.5
10
500
100
mA
nA
dB
V
V
nA
ns
ns
Channel separation 2/
Enable input voltage high 2/
Enable input voltage low 2/
Enable input current 2/
Output enable delay 2/
Output disable delay 2/
1/
2/
CH
SEP
V
HI
V
LO
I
EN
t
ON
EN
t
OFF
EN
R
L
= 2 kΩ, f = 1.0 kHz
HI = enabled
LO = disabled
4,5,6
1,2,3
1,2,3
1,2,3
All
02,03
02,03
02,03
02,03
02,03
See figure 4
9,10,11
9,10,11
These devices have been tested to (2 Mrad(Si)) to Method 1019, condition A of MIL-STD-883 at +25°C for these
parameters to assure the requirements of RHA designator level "H” (1Mrad(Si)) are met.
Not tested. Shall be guaranteed by design, characterization, or correlation to other test parameters.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-10241
SHEET
5
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