ACPM-7868
5 x 5 mm Power Amplifier Module
Linear Quad-Band GSM/EDGE
Data Sheet
Description
The ACPM-7868 is a linear quad-band / multi-mode power
amplifier module for both GMSK and 8-PSK modulation
schemes. There are two amplifier chains, one is to support
GSM850/900 bands, and the other is to support DCS1800/
PCS1900 bands.
CoolPAM technology, which is Avago Technologies’ Power
Amplifier technology provides extended talk time with
extremely low quiescent current and enhanced efficiency
at low and medium power modes.
The ACPM-7868 module adopted sixth generation of
CoolPAM technology and is designed to enhance power
efficiency by using digital power mode control. Two mode
control pins provide four power modes for low band and
three power modes for high band.
Input and output terminals are internally matched to
50
:.
The PA also contains internal DC blocking capaci-
tors for RF input and output ports. The power amplifier
is manufactured on an advanced InGaP HBT technology
offering state-of-the-art reliability, temperature stability
and ruggedness. This module is housed in a cost effective,
extremely small and thin 5 x 5 mm package.
Features
x
Quad Band GSM / Linear EDGE PA
x
Small Size, Low Profile (5 x 5 x 0.9 mm)
x
Extremely low quiescent current
x
Digital power mode control for higher efficiency
x
4 modes for Low Band (HPM, MPM, LPM, and ULPM)
x
3 modes for High Band (HPM, LPM and ULPM)
x
16-pin surface mounting package
x
Internal 50
:
matching networks for both RF input and
output
x
Green (Lead-free and RoHS compliant)
Applications
x
Quad-band GSM and EDGE
Ordering Information
Part Number
ACPM-7868-TR1
ACPM-7868-BLK
Number of Devices
1000
100
Container
178 mm (7”)
Tape/Reel
Bulk
Absolute Maximum Ratings
Description
RF Input Power
*
DC Supply Voltage
Enable Voltage
Mode Control Voltage
Storage Temperature
Min
–
0
0
0
-55
Typ
Max
15
5.5
3.3
3.3
+125
Unit
dBm
V
V
V
°C
Associated Pins
RFIn_LB, RFIn_HB
Vbatt, Vcc
Ven_LB, Ven_HL
Vmode0, Vmod1
* under 50
:
Notes:
1. No damage assuming only one parameter is set at limit at a time with all other parameters set at within recommended operating condition.
2. Operation of any single parameter outside these conditions may cause permanent damage or affect device reliability.
Operating Condition
Description
DC Supply Voltage
Enable Voltage (Ven)
Mode Control Voltage (Vmode0, Vmode1)
Case Temperature
LOW
HIGH
LOW
HIGH
Symbol
Min
3.0
0
1.35
0
1.35
-25
Typ.
3.5
1.8
1.8
Max
4.8
0.5
2.9
0.5
2.9
+90
Unit
V
V
V
V
V
°C
Control Logic Table for each Modes of Operation
Power Mode
Power Down
Low Band – High Power Mode (HPM)
Low Band – Medium Power Mode (MPM)
Low Band – Low Power Mode (LPM)
Low Band – Ultra Low Power Mode (ULPM)
High Band – High Power Mode (HPM)
High Band – Low Power Mode (LPM)
High Band – Ultra Low Power Mode (ULPM)
Ven_LB
Low
High
High
High
High
Low
Low
Low
Ven_HB
Low
Low
Low
Low
Low
High
High
High
Vmode0
X
Low
Low
High
High
Low
High
High
Vmode1
X
Low
High
Low
High
Low
Low
High
Recommended Power Levels for each Modes of Operation
Power Mode
Low Band – High Power Mode
Low Band – Medium Power Mode
Low Band – Low Power Mode
Low Band – Ultra Low Power Mode
High Band – High Power Mode
High Band – Low Power Mode
High Band – Ultra Low Power Mode
GMSK
30.5 dBm < Pout ≤ Psat
16 dBm < Pout ≤ 30.5 dBm
Pout ≤ 16 dBm
Pout ≤ 16 dBm
17 dBm < Pout ≤ Psat
11 dBm < Pout ≤ 17 dBm
Pout ≤ 11 dBm
EDGE
23 dBm < Pout ≤ 29 dBm
10 dBm < Pout ≤ 23 dBm
Pout ≤ 10 dBm
–
16dBm < Pout ≤ 28 dBm
Pout ≤ 16 dBm
–
2
GSM850/GSM900 PA performance specifications
– Conditions: Vbatt and Vcc = 3.5 V, pulse width = 1154
Ps,
duty cycle = 25%, Ven_LB = High, T = 25° C other wise specified
Parameter
Operating Frequency Range
Quiescent Current
Condition
GSM850
GSM900
High power mode
Medium power mode
Low Power mode
Ultra low power mode
Min
824
880
120
70
6
6
34.5
32.5
29
30.5
28.5
23
14
10
14
48
25
33
5
4
25.5
27
23.5
26.5
10
10
Typ
Max
849
915
Unit
MHz
MHz
mA
mA
mA
mA
dBm
dBm
150
90
8.5
8.5
35
180
110
11
11
Maximum Output Power
GMSK High power mode
GMSK High power mode
(degraded power for over Vcc, over Temp)
EDGE High power mode (RMS power)
GMSK Medium power mode
GMSK Medium power mode
(over Vcc, over Temp)
EDGE Medium power mode
(RMS power)
GMSK Low power mode
(over Vcc, over Temp)
EDGE Low power mode (RMS power)
GMSK Ultra low power mode
(over Vcc, over Temp)
29.5
31
dBm
dBm
dBm
dBm
16
dBm
dBm
16
52
28
36
8
6
32
32
31
31
17
17
0.8
1.3
+2.5
dBm
%
%
%
%
%
dB
dB
dB
dB
dB
dB
dB
dB
Power Added Efficiency
GMSK High power mode, Po = max
EDGE high power mode, Po = 29 dBm
GMSK medium power mode, Po = 30.5 dBm
Low Power mode , Po = 10 dBm
Ultra low power mode, Po = 8 dBm
Gain
High power mode, Po = 34.5 dBm
High power mode, Po = 33.5 dBm
Medium power mode, Po = 30.5 dBm
Medium power mode, Po = 28.5 dBm
Low Power mode, Po = 10 dBm
Ultra low power mode, Po = 8 dBm
Gain Compression
Gain Variation – Tc and Vbatt
(all modes of operation)
EDGE ACPR
High Power
Mode
Po ≤ 25 dBm**
Medium
Power Mode
Po ≤ 23 dBm
Low Power
Mode
Po ≤ 10 dBm
±400 kHz dBc
or dBm*
±600 kHz dBc
or dBm*
±3000 kHz dBc
or dBm*
±6000 kHz dBc
or dBm*
High power mode,
Po = 23.5 dBm ~ 33.5 dBm
-25 ≤ Tc ≤ 90
:
3.2 V ≤ Vbatt ≤ 4.2 V
(fixed Pin at 3.5 V, 25° C condition)
-2.5
-57
-40
-64
-55
-68
-50
-74
-59
dBc/30 kHz
dBm/30 kHz
dBc/30 kHz
dBm/30 kHz
dBc/100 kHz
dBm/100 kHz
dBc/100 kHz
dBm/100 kHz
3
GSM850/GSM900 PA performance specifications
(Continued)
Parameter
EDGE EVM
High Power Mode
Po ≤ 25 dBm**
Medium Power Mode
Po ≤ 23 dBm
Low Power Mode
Po ≤ 10 dBm
Output power Noise
High power mode
Medium power mode
Rx = 869-882 MHz, Tx = 837 MHz
Rx = 882-894 MHz, Tx = 837 MHz
Rx = 925-935 MHz, Tx = 898 MHz
Rx = 935-960 MHz, Tx = 898 MHz
Harmonics Po < 35 dBm
Stability
Ruggedness
Input Impedance
Current under mismatch
condition
Forward Isolation
Cross Isolation
2 fo
3 ~13 fo
F<1 GHz; 8:1 VSWR
F>2 GHz, 8:1 VSWR
All load phases
High power mode, Medium power mode
Low power mode, Ultra low power mode
VSWR = 5:1, all phase angles,
post PA loss = 1.5 dB, Pin = 9 dBm, Vcc = 3.7 V
Ven_LB = Low, Pin = -10 dBm
Spurious at HB Output,
Low Band signal (fundamental)
Ven_LB = High
2.7
10:1
2:1
3:1
3.3
-30
-15
2
A
dBm
dBm
dBm
Condition
Min
Typ
2
Max
3
Unit
%
-85
-86
-84
-85
-79
-85
-10
-15
-36
-30
dBm/100 kHz
dBm/100 kHz
dBm/100 kHz
dBm/100 kHz
dBm
dBm
dBm
dBm
* Note 1: If the dBc specification is tighter than the dBm limit, then the dBm limit shall be applied instead.
** Note 2: EDGE operation at high power mode can be extended up to 29 dBm in combination with the pre-distortion scheme of transceiver.
4
DCS1800/PCS1900 PA performance specifications
– Conditions: Vbatt and Vcc = 3.5 V, pulse width = 1154
Ps,
duty cycle = 25%, Ven_HB = High, T = 25° C other wise specified
Parameter
Operating Frequency Range
Quiescent Current
Condition
DCS1800
PCS1900
High power mode
Low power mode
Ultra Low Power mode
Min
1710
1850
130
30
12
32.5
30.5
28
17.8
16
11.8
48
28.5
8
4
25.5
26.5
13
10
-2.5
Typ
Max
1785
1910
Unit
MHz
MHz
mA
mA
mA
dBm
dBm
170
45
15
33
210
60
20
Maximum Output Power
GMSK High power mode
GMSK High power mode
(degraded power for over Vcc, over Temp)
EDGE High power mode (RMS power)
GMSK Low power mode
(over Vcc, over Temp)
EDGE Low power mode (RMS power)
GMSK Ultra low power mode
(over Vcc, over Temp)
28.5
19.8
dBm
dBm
dBm
13.8
53
30
10
6
31
32
22
20
+2.5
dBm
%
%
%
%
dB
dB
dB
dB
dB
Power Added Efficiency
GMSK High power mode, Po = Pmax
EDGE high power mode, Po = 28.5 dBm
Low Power mode , Po = 16 dBm
Ultra low power mode, Po = 8 dBm
Gain
High power mode, Po = 32 dBm
High power mode, Po = 28.5 dBm
Low Power mode, Po = 16 dBm
Ultra low power mode, Po = 8 dBm
Gain Variation – Tc and Vbatt
(all modes of operation)
EDGE ACPR
High Power
Mode
Po ≤ 24 dBm**
Low Power
Mode
Po ≤ 16 dBm
±400 kHz dBc
or dBm*
±600 kHz dBc
or dBm*
±1800 kHz dBc
or dBm*
±3000 kHz dBc
or dBm*
±6000 kHz dBc
or dBm*
EDGE EVM
High Power
Mode
Po ≤ 24 dBm**
Low Power
Mode
Po ≤ 16 dBm
-25 ≤ Tc ≤ 90
:
3.2 V ≤ Vbatt ≤ 4.2 V
(fixed Pin at 3.5 V, 25° C condition)
-57
-40
-64
-60
-65
-55
-68
-55
-76
-55
2
3
dBc/30 kHz
dBm/30 kHz
dBc/30 kHz
dBm/30 kHz
dBc/100 kHz
dBm/100 kHz
dBc/100 kHz
dBm/100 kHz
dBc/100 kHz
dBm/100 kHz
%
5
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