SGL50N60RUFD 600 V, 50 A Short Circuit Rated IGBT
April 2013
SGL50N60RUFD
600 V, 50 A Short Circuit Rated IGBT
General Description
Fairchild
®
’s RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
•
•
•
•
•
•
50 A, 600 V, T
C
= 100°C
Low Saturation Voltage: V
CE
(sat) = 2.2 V @ I
C
= 50 A
Typical Fall Time. . . . . . . . . .261ns at T
J
= 125°C
High Speed Switching
High Input Impedance
Short Circuit Rating
Applications
Motor control, UPS, General Inverter.
C
G
TO-264
G
C
E
T
C
= 25C unless otherwise noted
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
T
SC
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25C
@ T
C
= 100C
@ T
C
= 100C
@ T
C
= 100C
@ T
C
= 25C
@ T
C
= 100C
SGL50N60RUFD
600
20
80
50
150
30
90
10
250
100
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
A
us
W
W
C
C
C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
JC
(IGBT)
R
JC
(DIODE)
R
JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.5
1.0
25
Unit
C/W
C/W
C/W
©1999 Fairchild Semiconductor Corporation
SGL50N60RUFD
Rev. C0
1
www.fairchildsemi.com
SGL50N60RUFD 600 V, 50 A Short Circuit Rated IGBT
Electrical Characteristics of the IGBT
T
Off Characteristics
BV
CES
B
VCES
/
T
J
I
CES
I
GES
Symbol
Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
On Characteristics
V
GE(th)
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/C
uA
nA
V
CE(sat)
Dynamic Characteristics
C
ies
C
oes
C
res
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Ic = 50mA, V
CE
= V
GE
I
C
= 50A
,
V
GE
= 15V
I
C
= 80A
,
V
GE
= 15V
5.0
--
--
6.0
2.2
2.5
8.5
2.8
--
V
V
V
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
sc
Q
g
Q
ge
Q
gc
L
e
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
=30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
3311
399
139
--
--
--
pF
pF
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
V
CC
= 300 V, I
C
= 50A,
R
G
= 5.9, V
GE
= 15V,
Inductive Load, T
C
= 25C
V
CC
= 300 V, I
C
= 50A,
R
G
= 5.9, V
GE
= 15V,
Inductive Load, T
C
= 125C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
10
--
--
--
--
26
89
66
118
1.68
1.03
2.71
28
91
68
261
1.7
2.31
4.01
--
145
25
70
18
--
--
100
200
--
--
3.8
--
--
110
400
--
--
5.62
--
210
35
100
--
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
us
nC
nC
nC
nH
V
CC
= 300 V, V
GE
= 15V
@
T
C
= 100C
V
CE
= 300 V, I
C
= 50A,
V
GE
= 15V
Measured 5mm from PKG
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
C
= 25C unless otherwise noted
Test Conditions
T
C
= 25C
I
F
= 30A
T
C
= 100C
T
C
= 25C
T
C
= 100C
I
F
= 30A,
di/dt = 200 A/us
T
C
= 25C
T
C
= 100C
T
C
= 25C
T
C
= 100C
Min.
--
--
--
--
--
--
--
--
Typ.
1.9
1.8
70
140
6
8
200
580
Max.
2.8
--
100
--
7.8
--
360
--
Unit
V
ns
A
nC
©1999 Fairchild Semiconductor Corporation
SGL50N60RUFD
Rev. C0
2
www.fairchildsemi.com
SGL50N60RUFD 600 V, 50 A Short Circuit Rated IGBT
140
120
Common Emitter
T
C
= 25
℃
20V
15V
140
120
Common Emitter
V
GE
= 15V
T
C
= 25
℃ ━━
T
C
= 125
℃
------
Collector Current, I
C
[A]
12V
100
80
60
40
20
0
0
2
4
6
8
Collector Current, I
C
[A]
100
80
60
40
20
0
V
GE
= 10V
1
10
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
5
60
[V]
Common Emitter
V
GE
= 15V
4
50
V
CC
= 300V
Load Current : peak of square wave
CE
Collector - Emitter Voltage, V
100A
3
50A
2
I
C
= 30A
Load Current [A]
40
30
20
1
10
0
-50
0
50
100
150
0
Duty cycle : 50%
T
C
= 100
℃
Power Dissipation = 70W
1
10
100
1000
Case Temperature, T
C
[
℃
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25
℃
20
Common Emitter
T
C
= 125
℃
16
[V]
CE
Collector - Emitter Voltage, V
Collector - Emitter Voltage, V
CE
16
[V]
12
12
8
8
100A
4
I
C
= 30A
0
0
4
8
12
16
20
50A
4
I
C
= 30A
0
0
4
8
100A
50A
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
©1999 Fairchild Semiconductor Corporation
SGL50N60RUFD
Rev. C0
3
www.fairchildsemi.com
SGL50N60RUFD 600 V, 50 A Short Circuit Rated IGBT
7000
6000
5000
4000
3000
Coes
2000
Cres
1000
0
1
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
℃
1000
Common Emitter
V
CC
= 300V, V
GE
= ± 15V
I
C
= 50A
T
C
= 25
℃ ━━
T
C
= 125
℃
------
Capacitance [pF]
Ton
Switching Time [ns]
Cies
Tr
100
10
10
100
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Switching Time [ns]
Common Emitter
V
CC
= 300V, V
GE
= ± 15V
I
C
= 50A
T
C
= 25
℃ ━━
T
C
= 125
℃
------
10000
Common Emitter
V
CC
= 300V, V
GE
= ± 15V
I
C
= 50A
T
C
= 25
℃ ━━
T
C
= 125
℃
------
Toff
Toff
Eon
Switching Loss [uJ]
Eoff
Tf
Eoff
1000
100
Tf
10
100
10
100
Gate Resistance, R
G
[
]
Gate Resistance, R
G
[
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V
GE
= ± 15V, R
G
= 5.9
T
C
= 25
℃ ━━
T
C
= 125
℃
------
1000
Switching Time [ns]
Ton
Tr
Switching Time [ns]
Toff
Tf
Toff
100
Tf
Common Emitter
V
GE
= ± 15V, R
G
= 5.9
T
C
= 25
℃ ━━
T
C
= 125
℃
------
100
10
10
20
40
60
80
100
10
20
40
60
80
100
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©1999 Fairchild Semiconductor Corporation
SGL50N60RUFD
Rev. C0
4
www.fairchildsemi.com
SGL50N60RUFD 600 V, 50 A Short Circuit Rated IGBT
10000
15
Common Emitter
V
GE
= ± 15V, R
G
= 5.9
T
C
= 25
℃ ━━
T
C
= 125
℃
------
Eon
Gate - Emitter Voltage, V
GE
[ V ]
Eoff
Eoff
12
Common Emitter
R
L
= 6
T
C
= 25
℃
V
CC
= 100 V
300 V
Switching Loss [uJ]
9
200 V
1000
6
3
100
10
20
40
60
80
100
0
0
30
60
90
120
150
180
Collector Current, I
C
[A]
Gate Charge, Q
g
[ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500
I
C
MAX. (Pulsed)
100
I
C
MAX. (Continuous)
1
㎳
10
DC Operation
50us
100us
100
Collector Current, I
C
[A]
Collector Current, I
C
[A]
10
1
Single Nonrepetitive
Pulse T
C
= 25
℃
Curves must be derated
linearly with increase
in temperature
0.3
1
10
100
1000
0.1
1
1
Safe Operating Area
V
GE
= 20V, T
C
= 100
℃
10
100
1000
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Thermal Response, Zthjc [
℃
/W]
1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
Pdm
t1
t2
single pulse
1E-3
10
-5
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©1999 Fairchild Semiconductor Corporation
SGL50N60RUFD
Rev. C0
5
www.fairchildsemi.com
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