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AUIRFZ44NS

Description
49 A, 55 V, 0.0175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
CategoryDiscrete semiconductor    The transistor   
File Size623KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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AUIRFZ44NS Overview

49 A, 55 V, 0.0175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

AUIRFZ44NS Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)150 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)49 A
Maximum drain current (ID)49 A
Maximum drain-source on-resistance0.0175 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)94 W
Maximum pulsed drain current (IDM)160 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
 
AUTOMOTIVE GRADE
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
AUIRFZ44NS
AUIRFZ44NL
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max.
I
D
D
D
 
55V
17.5m
49A
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
Base part number
AUIRFZ44NL
AUIRFZ44NS
Package Type
TO-262
D
2
-Pak
S
G
D Pak
AUIRFZ44NS
2
G
TO-262
AUIRFZ44NL
S
D
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFZ44NL
AUIRFZ44NS
AUIRFZ44NSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally Limited)
E
AS (Tested)
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy (Tested Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
49
35
160
3.8
94
0.63
± 20
150
530
25
9.4
5.0
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
 
°C 
 
Thermal Resistance
 
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount), D
2
Pak
Typ.
–––
–––
Max.
1.5
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-10-27

AUIRFZ44NS Related Products

AUIRFZ44NS
Description 49 A, 55 V, 0.0175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Is it lead-free? Lead free
Is it Rohs certified? conform to
Maker International Rectifier ( Infineon )
Parts packaging code D2PAK
package instruction SMALL OUTLINE, R-PSSO-G2
Contacts 3
Reach Compliance Code compliant
ECCN code EAR99
Other features AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas) 150 mJ
Shell connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V
Maximum drain current (Abs) (ID) 49 A
Maximum drain current (ID) 49 A
Maximum drain-source on-resistance 0.0175 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB
JESD-30 code R-PSSO-G2
JESD-609 code e3
Humidity sensitivity level 1
Number of components 1
Number of terminals 2
Operating mode ENHANCEMENT MODE
Maximum operating temperature 175 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260
Polarity/channel type N-CHANNEL
Maximum power dissipation(Abs) 94 W
Maximum pulsed drain current (IDM) 160 A
Certification status Not Qualified
surface mount YES
Terminal surface MATTE TIN OVER NICKEL
Terminal form GULL WING
Terminal location SINGLE
Maximum time at peak reflow temperature 30
transistor applications SWITCHING
Transistor component materials SILICON
Base Number Matches 1
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