SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B
KTC3113
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURE
・High
DC Current Gain : h
FE
=600½3600.
・Small
Package.
H
M
A
O
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
50
50
5
150
30
400
150
-55½150
UNIT
V
J
C
E
E
V
V
mA
mA
mW
℃
℃
1
L
2
3
N
DIM MILLIMETERS
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
_
D
2.40 + 0.15
E
1.27
F
2.30
_
G
14.00+ 0.50
H
0.60 MAX
J
1.05
K
1.45
L
25
M
0.80
N
0.55 MAX
O
0.75
F
1. EMITTER
2. COLLECTOR
3. BASE
K
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
NF(2)
Note: h
FE
Classification A:600½1800 , B:1200½3600
V
CE
=6V, I
C
=0.1mA, f=1kHz, Rg=10kΩ
-
0.3
-
dB
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
f
T
C
ob
NF(1)
TEST CONDITION
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=0.1mA, f=100Hz, Rg=10kΩ
MIN.
-
-
600
-
100
-
-
TYP.
-
-
-
0.12
250
3.5
0.5
MAX.
0.1
0.1
3600
0.25
-
-
-
V
MHz
pF
dB
UNIT
μ
A
μ
A
1995. 12. 4
Revision No : 0
D
G
TO-92M
1/3
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