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NAND98R3M0AZBA5E

Description
Memory Circuit, Flash+SDRAM, PBGA149
Categorystorage    storage   
File Size725KB,33 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

NAND98R3M0AZBA5E Overview

Memory Circuit, Flash+SDRAM, PBGA149

NAND98R3M0AZBA5E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
package instructionFBGA, BGA149,12X16,32
Reach Compliance Codecompliant
JESD-30 codeR-PBGA-B149
Memory IC TypeMEMORY CIRCUIT
Mixed memory typesFLASH+SDRAM
Number of terminals149
Maximum operating temperature85 °C
Minimum operating temperature-30 °C
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA149,12X16,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
power supply1.8 V
Certification statusNot Qualified
Nominal supply voltage (Vsup)1.8 V
surface mountYES
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
NANDxxxxMx
256/512-Mbit or 1-Gbit (x8/x16, 1.8/2.6 V, 528-byte page) NAND
flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP
Features
n
FBGA
Packages
– MCP (multichip package)
– PoP (package on package)
Device composition
– 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)
SLC small page NAND flash memory
– 1 die of 256 or 512 Mbits (x16 or x32)
SDR/DDR LPSDRAM
Supply voltages
– V
DDF
= 1.7 V to 1.95 V or 2.5 V to 3.6 V
– V
DDD
= V
DDQD
= 1.7 V to 1.95 V
Electronic signature
ECOPACK
®
packages
Temperature range: –30 to 85 °C
n
n
TFBGA107 10.5 × 13 × 1.2 mm (ZBB)
TFBGA149 10 × 13.5 × 1.2 mm (ZBA)
TFBGA137 10.5 × 13 × 1.2 mm (ZBC)
LFBGA137 10.5 × 13 × 1.4 mm (ZBC)
FBGA
n
TFBGA152 14 x 14 x 1.1 mm (ZPA)
Data integrity
– 100 000 program/erase cycles
– 10 years data retention
n
n
n
Flash memory
n
Single or double data rate LPSDRAM
n
n
n
n
n
n
NAND interface
– x8/x16 bus width
– Multiplexed address/data
Page size
– x8 device: (512 + 16 spare) bytes
– x16 device: (256 + 8 spare) words
Block size
– x8 device: (16K + 512 spare) bytes
– x16 device: (8K + 256 spare) words
Page read/program
– Random access: 12 µs (3 V), 15 µs (1.8 V)
– Sequential access: 30 ns (3 V), 50 ns
(1.8 V)
– Page program time: 200 µs (typ)
Copy back program mode
– Fast page copy without external buffering
Fast block erase
– Block erase time: 2 ms (typ)
– Status register
Interface: ×16 or ×32 bus width
Deep power-down mode
1.8 V LVCMOS interface
Quad internal banks controlled by BA0, BA1
Automatic and controlled precharge
Auto refresh and self refresh
– 8 192 refresh cycles/64 ms
– Programmable partial array self refresh
– Auto temperature compensated self refresh
Wrap sequence: sequential/interleave
Burst termination by Burst Stop command and
Precharge command
Device summary
NAND99W3M0 NAND98R4M2
NAND99W3M1 NAND99R3M1
NANDA9W3M1
NAND99R4M2
NAND98W3M1
NAND98R3M2
n
n
n
n
n
Table 1.
NANDxxxxMx
Rev 13
n
n
NAND88R3M0
NAND98R3M0
NAND98W3M0
NAND99R3M0
NAND99R3M2
NAND98R3M1
October 2008
1/32
www.numonyx.com
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