DATA SHEET
SEMICONDUCTOR
VOLTAGE RANGE
50 to 600 Volts
10.0 Amperes
ITO-220AB
Unit:inch(mm)
SF1001FCT~SF1007FCT
FEATURES
•
Low forward voltage drop
•
High current capability
•
High reliability
•
High surge current capability
•
Good for switching mode application
•
High temperature soldering : 260
O
C / 10 seconds at terminals
•
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
.130 (3. )
3
MAX
.185(4. )
8
MAX
.406(10.3)MAX
.134(3.4)DIA
.113(3.0)DIA
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
.606(15. )
4
.583(14.8)
.161(4.1)
MAX
.11 4 (2. )
9
.098(2.5)
.055(1.4)
MAX
.035(0.9)
MAX
.543(13.8)
.512(13.0 )
MECHANICAL DATA
•
Case: Molded plastic
•
Epoxy: UL 94V-0 rate flame retardant
•
Lead: Lead solderable per MIL-STD-202,
method 208 guranteed
•
Polarity: As Marked
•
Mounting position: Any
•
Weight: 2.24 grams
.03 2 (0. )
8
MAX
.100(2.55)
.100(2.55)
AC
Positive CT
AC
+
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25
°C
ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse V oltage
Maximum RMS Voltage
Maxi mum DC Blocki ng Voltage
Maximum Average Forward Rect if ied Current
.375"(9.5mm) Lead Length at Tc=100
°C
Peak Forward Surge Current , 8.3 ms single half
sine- wave
superimposed on rated load (J EDEC method)
Maximum I nstantaneous Forward Vol tage at
5.0A
Maxi mum DC Reverse Cur rent Tc=25
°C
at Rated DC Blocking Vol tage Tc=100
°C
Maximum Reverse Recovery Time (Note 1)
Typi cal Junction Capaci tance (Note 2)
Oper ati ng and Storage Temperature Range TJ,
TSTG
NOTES:
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
35
50
-55 +150
0.95
10
500
50
1.30
1.70
V
uA
uA
nS
pF
°C
150
A
SF1001FCT SF1002FCT SF1003FCT SF1004FCT SF1005FCT SF1006FCT SF1007FCT UNITS
50
35
50
100
70
100
150
105
150
200
140
200
10.0
300
210
300
400
280
400
600
420
600
V
V
V
A
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REV.02 20110725
RATINGS AND CHARACTERISTIC CURVES
SF1001FCT~SF1007FCT
RATING AND CHARACTERISTIC CURVES
AV E R A G E F O R WA R D C U R R E N T,
AMPERES
8
6
4
2
0
LEADLENGHTS
RESISTIVEORINDUCTIVE LOAD
PEAK FORWARD SURGE CURRENT,
10
150
125
100
75
50
25
0
8.3ms Single
Half Since-Wave
JEDEC Method
0
20
40
60
80
100
O
120
140
160
CASE TEMPERAURE, C
1
2
5
10
20
50
100
NO. OF CYCLE AT 60HZ
Fig.1- FORWARD CURRENT DERATING CURVE
Fig.2- MAXIMUM NON - REPETITIVE SURGE CURRENT
40
INSTANTANEOUS REVERSE
CURRENT,
µA
10
I N S T N TA N E O U S F O R WA R D C U R R E N T
AMPERES
T
J
= 125°C
10
200V
300-400V
Per Diode
1
T
J
= 75°C
T
J
= 25°C
600V
1
0.1
20
30
40
50
60
70
80
90
100
T
J
=25 C
Pulse Width=200us
O
PERCENT OF RATED PEAK REVERSE
VOLTAGE, (%)
.1
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE ,VOLTS
Fig.3- TYPICAL REVERSE CHARACTERISTIC
Fig.4- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
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REV.02 20110725
Microcontroller MCU
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