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SI3443DVPBF

Description
Ultra Low On-Resistance
CategoryDiscrete semiconductor    The transistor   
File Size107KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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SI3443DVPBF Overview

Ultra Low On-Resistance

SI3443DVPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTSOP
package instructionLEAD FREE, TSOP-6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresULTRA LOW ON-RESISTANCE
Avalanche Energy Efficiency Rating (Eas)31 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)4.4 A
Maximum drain current (ID)4.4 A
Maximum drain-source on-resistance0.065 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-193AA
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level2
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)2 W
Maximum pulsed drain current (IDM)20 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
Transistor component materialsSILICON
PD-95240
Si3443DVPbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
-2.5V Rated
Lead-Free
D
1
6
A
D
V
DSS
= -20V
D
2
5
D
G
3
4
S
R
DS(on)
= 0.065Ω
Top View
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET
®
power MOSFET with R
DS(on)
60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and R
DS(on)
reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
TSOP-6
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current

Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-4.4
-3.5
-20
2.0
1.3
0.016
31
± 12
-55 to + 150
Units
V
A
W
W/°C
mJ
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
ƒ
Max.
62.5
Units
°C/W
www.irf.com
1
08/31/05

SI3443DVPBF Related Products

SI3443DVPBF SI3443DVTRPBF
Description Ultra Low On-Resistance Ultra Low On-Resistance
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE Single
Maximum drain current (Abs) (ID) 4.4 A 4.4 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e3 e3
Humidity sensitivity level 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 2 W 2 W
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
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