DATA SHEET
SEMICONDUCTOR
SURFACE MOUNT REVERSE VOLTAGE - 50 to 1000 Volts
ULTRA FAST RECTIFIERS FORWARD CURRENT - 1.0 Ampere
FEATURES
•
Glass passivated chip
•
Ultra fast switching for high efficiency
•
For surface mounted applications
•
Low forward voltage drop and high current capability
•
Low reverse leakage current
•
Plastic material has UL flammability classification 94V-0
•
High temperature soldering : 260
O
C / 10 seconds at terminals
•
Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
.185(4.70)
.160(4.06)
.012(.305)
.006(.152)
.083(2.11)
.075(1.91)
.155(3.94)
.130(3.30)
UF1A~UF1M
SMB/DO-214AA
Unit:inch(mm)
MECHANICAL DATA
•
Case : Molded plastic
•
Polarity : Indicated by cathode band
•
Weight : 0.003 ounces, 0.093 grams
.096(2.44)
.083(2.13)
.012(.31)
.006(.15)
.050(1.27)
.030(0.76)
.220(5.59)
.200(5.08)
.008(.203)
.002(.051)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
°C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse V oltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TL =75
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
UF1A
50
35
50
UF1B
100
70
100
UF1D
200
140
200
UF1G
400
280
400
1.
0
UF1J
600
420
600
UF1K
800
560
800
UF1M
1000
700
1000
UNIT
V
V
V
A
Peak For ward Surge Current
8.3ms single half sine- wave
super imposed on rated load (JEDEC METHOD)
Maxi mum f orward Voltage at 1.0A DC
Maxi mum DC Reverse Cur rent
at Rated DC Blocking Voltage
@TJ =25
°C
@TJ =100
°C
V
F
I
R
T
RR
C
J
R
θJL
T
J
T
STG
50
20
30
-55 to +150
-55 to +150
1.
0
1.
3
5
100
75
10
1.
5
1.
7
V
uA
ns
pF
°C/W
I
FSM
30
A
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3 )
Oper ating Temperature Range
Storage Temperature Range
°C
°C
NOTES : 1.Reverse Recovery Test Conditions :I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance junction to Lead.
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REV.02 20110725
RATING AND CHARACTERISTIC CURVES
UF1A~UF1M
t
rr
+0.5A
0
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
-1.0
SET TIME
BASE FOR
50 ns/cm
1cm
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
10
TYPICAL
TJ = 25
°C
PEAK FORWARD SURGE CURRENT,
AMPERES
100
TJ = 25
°C
f = 1.0MHz
Vsig = 50m Vp-p
IFM, Apk
1.0
UF1G
UF1A
10
0.1
UF1K
1
0.1
1
10
100
.01
0
.
2
.4
.
6
.8
1.0 1.2
1.4
REVERSE VOLTAGE, VOLTS
Fig. 2-FORWARD CHARACTERISTICS
PEAK FORWARD SURGE CURRENT,
AMPERES
Fig. 3- TYPICAL JUNCTION CAPACITANCE
30
25
20
15
10
5
8.3ms SINGLE HALF SINE WAVE
JEDEC METHOD
2.0
AVERAGE FORWARD
CURRENT AMPERES
SINGLE PHASE HALF WAVE
RESISTIVE OR INDUCTIVE
P.C.B MOUNTED ON
0.315×0.315"(8.0×8.0mm)
PAD AREAS
1.0
25
50
75
100 125 150 175
1
2
5
10
20
50
100
LEAD TEMPERATURE,
°C
NUMBER OF CYCLES AT 60Hz
Fig. 4- FORWARD CURRENT DERATING CURVE
Fig. 5-PEAK FORWARD SURGE CURRENT
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REV.02 20110725
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