IRFAG50 datasheet, PDF - EEWORLD Datasheet

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IRFAG50: Description5.6A, 1000V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size85KB，3 Pages; ManufacturerSEMELAB

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IRFAG50 Overview

5.6A, 1000V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN

IRFAG50 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SEMELAB
Parts packaging code	TO-3
package instruction	FLANGE MOUNT, O-MBFM-P2
Contacts	2
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	860 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (ID)	5.6 A
Maximum drain-source on-resistance	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AA
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	22 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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N-CHANNEL

POWER MOSFET

IRFAG50

•

Low RDS(on) Power MOSFET Transistor

In A Hermetic Metal TO3 Package

•

Designed For Switching, Power Supply,

Motor Control and Amplifier Applications

Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated)

VDS

VGS

IDM

EAS

dv/dt

Tstg

Drain – Source Voltage

Gate – Source Voltage

Continuous Drain Current

Pulsed Drain Current

(1)

Total Power Dissipation at

Tc = 25°C

Tc = 100°C

Tc = 25°C

Derate Above 25°C

Single Pulse Avalanche Energy

(2)

Peak Diode Recovery

(3)

Junction Temperature Range

Storage Temperature Range

1000V

±20V

5.6A

3.5A

22A

150W

1.2W/°C

860mJ

1.0V/ns

-55 to +150°C

THERMAL PROPERTIES

Symbols

θJC

Parameters

Thermal Resistance, Junction To Case

Min.

Typ.

Max.

0.83

Units

°C/W

INTERNAL PACKAGE INDUCTANCE

Symbols

Parameters

Internal Drain Inductance

Internal Source Inductance

Min.

Typ.

Max.

Units

Notes

(1) Repetitive Rating: Pulse width limited by maximum junction temperature

(2) @VDD = 50V, L = 52 mH, Peak IL = 5.6A, Starting TJ = 25°C, RG = 25Ω

(3)

(4)

@ ISD

≤

5.6A, di/dt

≤

120A/µs, VDD

≤

600V, TJ

≤

150°C, Suggested RG = 6.2Ω

Pulse Width

≤

300us,

δ ≤

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Document Number 8699

Issue 2

Page 1 of 3

Website:

http://www.semelab-tt.com

IRFAG50 Related Products

	IRFAG50
Description	5.6A, 1000V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SEMELAB
Parts packaging code	TO-3
package instruction	FLANGE MOUNT, O-MBFM-P2
Contacts	2
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	860 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (ID)	5.6 A
Maximum drain-source on-resistance	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AA
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	22 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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