DATA SHEET
SEMICONDUCTOR
SUPE RFAST RECOVERY RECTIFIERS
VOLTAG E - 50 to 8 00 Volts CURRENT - 3.0 Amperes
FEATURES
•
Superfast recovery times-epitaxial construction
•
Low forward voltage, high current capability
•
Exceeds environmental standards of MIL-S-19500/228
•
Hermetically sealed
•
Low leakage
•
High surge capability
•
Plastic package has Underwriters Laboratories
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound
•
High temperature soldering : 260
O
C / 10 seconds at terminals
•
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
1.0 (25.4)
MIN.
.375 (9.5)
.285 (7.2)
.210 (5.3)
.188 (4.8)
DIA.
1.0 (25.4)
MIN.
SF31G~SF38 G
DO-201AD Unit:inch(mm)
MECHANICAL DATA
•
Case: Molded plastic, DO-201AD
•
Terminals: Axial leads, solderable to MIL-STD-202,
Method 208
•
Polarity: Color Band denotes cathode end
•
Mounting Position: Any
•
Weight: 0.04 ounce, 1.12 grams
.052 (1.3)
.048 (1.2)
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Resistive or inductive load, 60Hz.
SYMBOLS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Current .375"(9.5mm) lead length
at TA=55
°C
Peak Forward Surge Current, IFM (surge):
8.3ms single half sine-wave superimposed
on rated load(JEDEC method)
Maximum Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum DC Reverse Current at
Rated DC Blocking Voltage TA=125
°C
Maximum Reverse Recovery Time(Note 1)
Typical Junction capacitance (Note 2)
Typical Junction Resistance(Note 3)
Operating and Storage Temperature Range TJ
IR
TRR
CJ
RθJA
TJ,TSTG
VF
IR
0.95
5.0
300
35.0
35
20.0
-55 to +150
1.25
1.7
V
SF31G
50
35
50
SF32G
100
70
100
SF33G
150
105
150
SF34G
200
140
200
3.0
SF35G
300
210
300
SF36G
400
320
400
SF37G
600
420
600
SF38G
800
640
800
UNITS
V
V
V
VRRM
VRMS
VDC
I(AV)
A
IFSM
125.0
A
uA
uA
nS
pF
°C
/W
°C
NOTES:
1. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
3. Thermal resistance from junction to ambient and from junction to lead length 0.375”(9.5mm) P.C.B. mounted
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REV.02 20110725
RATINGS AND CHARACTERISTIC CURVES
SF31G~SF388G
FIG.1- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
Ω
NONINDUCTIVE
10
Ω
NONINDUCTIVE
trr
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
25
50
75
100
125
150
175
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.375"(9.5mm) Lead Length
+0.5A
(+)
25Vdc
(approx.)
( )
1
Ω
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
|
|
|
|
|
|
|
|
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
AMBIENT TEMPERATURE,( C)
FIG.3-TYPICAL FORWARD
CHARACTERISTICS
50
INSTANTANEOUS FORWARD CURRENT,(A)
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
50
G~
S
F34
3.0
1.0
REVERSE LEAKAGE CURRENT, (µA)
10
10
3.0
1.0
Tj=100 C
G
SF
31
SF
3
6G
G~
35
SF
37
G-
SF
38
G
SF
0.1
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
Tj=25 C
.01
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
.01
0
20
40
60
80
100 120 140
AGE,(V)
FORWARD VOLT
AGE,(%)
PERCENT OF RATED PEAK REVERSE VOLT
FIG.5-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,(A)
125
FIG.6-TYPICAL JUNCTION CAPACITANCE
175
150
125
100
75
50
25
0
100
75
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
50
25
0
1
5
10
50
100
JUNCTION CAPACITANCE,(pF)
.01
.05
.1
.5
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE,(V)
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REV.02 20110725
Embedded System
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