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SF15L(G)

Description
Ultrafast Recovery Diode, 1A, 300V, 30A, 1.25V, 1A, 5μA, 35nS
CategoryDiscrete semiconductor    Super fast recovery diode   
File Size1001KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric Compare View All

SF15L(G) Overview

Ultrafast Recovery Diode, 1A, 300V, 30A, 1.25V, 1A, 5μA, 35nS

SF15L(G) Parametric

Parameter NameAttribute value
Case StyleA-405
IF(A)1
VRRM (V)300
IFSM (A)30
VF (V)1.25
@ IF (A)1
Maximum reverse current5
TRR(nS)35
classDiodes
SF11L-SF16L
Super Fast Rectifier
Features
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
VOLTAGE RANGE: 50 --- 400 V
CURRENT: 1.0 A
A-405
Mechanical Data
Case:JEDEC
A-405,molded
plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight:
0.008ounces,0.23 grams
Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SF11L
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
SF12L
100
70
100
SF13L
150
105
150
1.0
SF14L
200
140
200
SF15L
300
210
300
SF16L
400
280
400
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0A
Maximum reverse current
@T
A
=25
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.95
5.0
50.0
35
15
50
- 55 ----- + 150
- 55 ----- + 150
1.25
V
A
ns
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
(Note3)
10
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com

SF15L(G) Related Products

SF15L(G) SF11L(G) SF12L(G) SF13L(G) SF14L(G) SF16L(G)
Description Ultrafast Recovery Diode, 1A, 300V, 30A, 1.25V, 1A, 5μA, 35nS Ultrafast Recovery Diode, 1A, 50V, 30A, 0.95V, 1A, 5μA, 35nS Ultrafast Recovery Diode, 1A, 100V, 30A, 0.95V, 1A, 5μA, 35nS Ultrafast Recovery Diode, 1A, 150V, 30A, 0.95V, 1A, 5μA, 35nS Ultrafast Recovery Diode, 1A, 200V, 30A, 0.95V, 1A, 5μA, 35nS Ultrafast Recovery Diode, 1A, 400V, 30A, 1.25V, 1A, 5μA, 35nS
Case Style A-405 A-405 A-405 A-405 A-405 A-405
IF(A) 1 1 1 1 1 1
VRRM (V) 300 50 100 150 200 400
IFSM (A) 30 30 30 30 30 30
VF (V) 1.25 0.95 0.95 0.95 0.95 1.25
@ IF (A) 1 1 1 1 1 1
Maximum reverse current 5 5 5 5 5 5
TRR(nS) 35 35 35 35 35 35
class Diodes Diodes Diodes Diodes Diodes Diodes
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