PHW9N60E127 datasheet, PDF - EEWORLD Datasheet

PHW9N60E127: DescriptionTRANSISTOR 8.7 A, 600 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size140KB，4 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

Download Datasheet Parametric Compare View All

PHW9N60E127 Overview

TRANSISTOR 8.7 A, 600 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, FET General Purpose Power

Parameter Name	Attribute value
Maker	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
Other features	FAST SWITCHING
Avalanche Energy Efficiency Rating (Eas)	813 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	8.7 A
Maximum drain-source on-resistance	0.85 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-247
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	35 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

	PHW9N60E127	PHB9N60E118
Description	TRANSISTOR 8.7 A, 600 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, FET General Purpose Power	TRANSISTOR 8.7 A, 600 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
Maker	NXP	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknow
Other features	FAST SWITCHING	FAST SWITCHING
Avalanche Energy Efficiency Rating (Eas)	813 mJ	813 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V	600 V
Maximum drain current (ID)	8.7 A	8.7 A
Maximum drain-source on-resistance	0.85 Ω	0.85 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3	R-PSSO-G2
Number of components	1	1
Number of terminals	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	35 A	35 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components