5962R1020304VXC datasheet, PDF

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5962R1020304VXC: DescriptionMulti-Port SRAM Module, 4MX32, 20ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132; Categorystorage storage; File Size246KB，27 Pages; ManufacturerCobham Semiconductor Solutions

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5962R1020304VXC Overview

Multi-Port SRAM Module, 4MX32, 20ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132

5962R1020304VXC Parametric

Parameter Name	Attribute value
Maker	Cobham Semiconductor Solutions
Parts packaging code	QFP
package instruction	QFP,
Contacts	132
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	20 ns
Other features	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY
JESD-30 code	S-CQFP-G132
JESD-609 code	e4
length	22.86 mm
memory density	134217728 bit
Memory IC Type	MULTI-PORT SRAM MODULE
memory width	32
Number of functions	1
Number of terminals	132
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	105 °C
Minimum operating temperature	-55 °C
organize	4MX32
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QFP
Package shape	SQUARE
Package form	FLATPACK
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Filter level	MIL-PRF-38535 Class V
Maximum seat height	7.87 mm
Maximum supply voltage (Vsup)	2 V
Minimum supply voltage (Vsup)	1.7 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	GOLD
Terminal form	GULL WING
Terminal pitch	0.635 mm
Terminal location	QUAD
total dose	100k Rad(Si) V
width	22.86 mm

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Standard Products

UT8ER1M32 32Megabit SRAM MCM

UT8ER2M32 64Megabit SRAM MCM

UT8ER4M32 128Megabit SRAM MCM

Preliminary Data Sheet

December 7, 2012

www.aeroflex.com/memories

FEATURES



20ns Read, 10ns Write maximum access times available



Functionally compatible with traditional 1M, 2M and 4M

x 32 SRAM devices



CMOS compatible input and output levels, three-state

bidirectional data bus

- I/O Voltages 2.3V to 3.6V, 1.7V to 2.0Vcore



Available densities:

- UT8ER1M32: 33, 554, 432 bits

- UT8ER2M32: 67, 108, 864 bits

- UT8ER4M32: 134, 217, 728 bits



Operational environment:

- Total-dose: 100 krad(Si)

- SEL Immune: <110 MeV-cm

/mg

- SEU error rate = 8.1 x10

-16

errors/bit-day assuming

geosynchronous orbit, Adam’s 90% worst environment,

and 6600ns default Scrub Rate Period (=97% SRAM

availability)



Packaging option:

- 132-lead side-brazed dual cavity ceramic quad flatpack



Standard Microelectronics Drawing:

- UT8ER1M32: 5962-10202

- QML Q, Q+ and Vcompliant

- UT8ER2M32: 5962-10203

- QML Q, Q+ compliant

- QML V pending

- UT8ER4M32: 5962-10204

- QML Q and Q+ pending

INTRODUCTION

The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high

performance CMOS static RAM multichip modules (MCMs)

organized as two, four or eight individual 524,288 words x 32

bits respectively. Easy memory expansion is provided by active

LOW chip enables (En), an active LOW output enable (G), and

three-state drivers. This device has a power-down feature that

reduces power consumption by more than 90% when deselected.

Autonomous (master) and demanded (slave) scrubbing

continues while deselected.

Writing to the device is accomplished by driving one of the chip

enable (En) inputs LOW and the write enable (W) input LOW.

Data on the 32 I/O pins (DQ0 through DQ31) is then written into

the location specified on the address pins (A0 through A18).

Reading from the device is accomplished by driving one of the

chip enables (En) and output enable (G) LOW while driving

write enable (W) HIGH. Under these conditions, the contents of

the memory location specified by the address pins will appear

on the I/O pins.

Note:

Only on En pin may be active at any time.

The 32 input/output pins (DQ0 through DQ31) are placed in a

high impedance state when the device is deselected (En HIGH),

the outputs are disabled (G HIGH), or during a write operation

(En LOW, W LOW).

A[18:0]

512Kx32

(Master or Slave)

Die 1

DQ[31:0]

512Kx32

(Slave)

Die 2, 4, or 8

MBE

BUSY/NC

SCRUB

Figure 1. Block Diagram

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Parts packaging code	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP
package instruction	QFP,	QFP,	QFP,	QFP,	QFP,	QFP,	QFP,	QFP,
Contacts	132	132	132	132	132	132	132	132
Reach Compliance Code	unknown	unknow	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	20 ns	20 ns	20 ns	20 ns	20 ns	20 ns	20 ns	20 ns
Other features	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY
JESD-30 code	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132
JESD-609 code	e4	e4	e4	e4	e4	e4	e4	e4
length	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm
memory density	134217728 bit	134217728 bi	134217728 bit	134217728 bit	67108864 bit	67108864 bit	67108864 bit	134217728 bit
Memory IC Type	MULTI-PORT SRAM MODULE	MULTI-PORT SRAM MODULE	MULTI-PORT SRAM MODULE	MULTI-PORT SRAM MODULE	MULTI-PORT SRAM MODULE	MULTI-PORT SRAM MODULE	MULTI-PORT SRAM MODULE	MULTI-PORT SRAM MODULE
memory width	32	32	32	32	32	32	32	32
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	132	132	132	132	132	132	132	132
word count	4194304 words	4194304 words	4194304 words	4194304 words	2097152 words	2097152 words	2097152 words	4194304 words
character code	4000000	4000000	4000000	4000000	2000000	2000000	2000000	4000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	105 °C	105 °C	105 °C	105 °C	105 °C	105 °C	105 °C	105 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	4MX32	4MX32	4MX32	4MX32	2MX32	2MX32	2MX32	4MX32
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Filter level	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V
Maximum seat height	7.87 mm	7.87 mm	7.87 mm	7.87 mm	7.87 mm	7.87 mm	7.87 mm	7.87 mm
Maximum supply voltage (Vsup)	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER
Terminal surface	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
total dose	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V
width	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm
Maker	Cobham Semiconductor Solutions	-	Cobham Semiconductor Solutions	Cobham Semiconductor Solutions	Cobham Semiconductor Solutions	Cobham Semiconductor Solutions	Cobham Semiconductor Solutions	Cobham Semiconductor Solutions
Base Number Matches	-	1	1	1	1	1	-	-

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